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Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

机译：聚焦和非聚焦离子束辐射自发形成图案

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摘要

We study the formation and self-organization of "ripples" and "dots" spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar~+ ions and with a 30 keV Ga Focused Ion Beam. We follow the evolution of features from small amplitude to "nanospikes" with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.
机译：我们研究了在高能离子束对Si，Ge和GaSb均匀辐照期间自发出现的“波纹”和“点”的形成和自组织。亚keV非聚焦Ar〜+离子和30 keV Ga聚焦离子束都可以产生特征。随着离子剂量的增加，我们遵循从小幅度到“尖峰”特征的演变。似乎溅射区域的边缘会影响所形成的图案，这种效果可能通过在溅射不稳定性上施加横向边界条件来引导自组织。

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