Morphologies of Self-Assembled Quantum Dots: A Variational Approach

机译：自组装量子点的形态：一种变分方法

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We construct a 3D model for coherent island formation by (ⅰ) using a novel 3D strain tensor to account for bulk strains and (ⅱ) representing adatom diffusion as an external field that perturbs an otherwise flat strained layer. Equilibrium shapes of coherent islands and wetting layer thickness are obtained. Coherently compressed layers are typically unstable, but become stable in tension. Comparisons with Si_(1-x)Ge_x/Si(001) and Si_(0.5)Ge_(0.5)/Si_(1-x)Ge_x(001) layers are discussed.

机译：我们通过使用新的3D应变张量（ⅰ）来解释整体应变，并通过（formation）代表原子扩散作为扰动原本平坦的应变层的外部场，构建了用于相干岛形成的3D模型。获得相干岛的平衡形状和润湿层厚度。相干压缩的层通常不稳定，但是在张力上变得稳定。讨论了与Si_（1-x）Ge_x / Si（001）和Si_（0.5）Ge_（0.5）/ Si_（1-x）Ge_x（001）层的比较。

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来源
《Self-Assembly Processes in Materials》|2001年|p.173-178|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
R. Arief Budiman; Harry E. Ruda;
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作者单位

University of Toronto, Toronto, Ontario M5S 3E3, Canada;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots [J] . Ming Gong, Kaimin Duan, Chuan-Feng Li, Physical review. B, Condensed Matter And Materials Physics . 2008,第4期

机译：自组装InAs / InP量子点的电子结构：与自组装InAs / GaAs量子点的比较
2. Enhanced photovoltaic performance and morphological control of the PbS counter electrode grown on functionalized self-assembled nanocrystals for quantum-dot sensitized solar cells via cost-effective chemical bath deposition [J] . Thulasi-Varma Chebrolu Venkata, Rao S. Srinivasa, Ikkurthi Kanaka Durga, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2015,第39期

机译：通过具有成本效益的化学浴沉积，在功能化的自组装纳米晶体上生长的PbS对电极的增强的光伏性能和形态控制，用于量子点敏化太阳能电池
3. Electrochemical, spectroscopic and morphological characterization of electrostatic self-assembled hybrids of tetracationic phosphonium porphyrins and CdTe quantum dots [J] . Camilo García, Francesca Fuenzalida, Domingo Ruiz, Journal of Applied Electrochemistry . 2014,第12期

机译：四阳离子phospho卟啉和CdTe量子点的静电自组装杂化物的电化学，光谱和形态学表征
4. Morphologies of self-assembled quantum dots: a variational approach [C] . R. Arief Budiman, Harry E. Ruda Materials Research Society Symposium . 2002

机译：自组装量子点的形态：变分别方法
5. Morphology of epitaxially self-assembled quantum dots. [D] . Budiman, Roes Arief. 2002

机译：外延自组装量子点的形态。
6. Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy [O] . Yifei Zhang, Fengfeng Ye, Jianhui Lin, 2012

机译：通过导电原子力显微镜研究点间耦合提高单个自组装GeSi量子点的电导
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较

Morphologies of Self-Assembled Quantum Dots: A Variational Approach

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