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Realaxation of HOT photocarriers created by VUV photons in wide GAP crystals

机译:宽GAP晶体中由VUV光子产生的HOT光载流子的弛豫

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Spectral-kinetic investigation of the excitation spectra of intrinsic and impurity emissions hav been carried out for KI and MgO crystals by means of the synchrotron radiation of 6-35 eV at 5-10 K. In KI, we succeeded in separating the cration processes of secondary excitons and electron-hole paris in the region of 13-17 eV. TShe applied elastic uniaxial stress enhances the probability of 13-17 eV. The applied elastic uniaxial stress enhances the probability o f the self-trapping of excitons and decreases the migration of excitons to impurity centers in KI. The possibility to control the relaxation of holes at the unaxial stress of a crystal is discussed. The excitation spectra of 7.63 and 6.85 eV emissions, that correspond to the large-and small-radius electronic excitations localized near Ca~(2+), have been measured in a MgO:Ca crystal. The efficiency of these emissions, as well as of free exiton emission in MgO, sharply increases at 21-35 eV, where the absorption of one photon causes the formation of two or three electronic excitations.
机译:通过在5-10 K下通过6-35 eV的同步辐射对KI和MgO晶体进行了本征和杂质发射激发光谱的光谱动力学研究。在KI中,我们成功地分离了次级激子和电子空穴巴黎在13-17 eV之间。施加弹性单轴应力可提高13-17 eV的概率。施加的弹性单轴应力增加了激子自陷的可能性,并减少了激子向KI中杂质中心的迁移。讨论了在晶体的非轴向应力下控制空穴弛豫的可能性。在MgO:Ca晶体中已测量到7.63和6.85 eV发射的激发光谱,分别对应于Ca〜(2+)附近的大半径和小半径电子激发。这些发射的效率以及MgO中自由出口发射的效率在21-35 eV时急剧增加,其中一个光子的吸收导致形成两个或三个电子激发。

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