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首页> 外文会议>Silicon carbide and related materials 2012 >Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
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Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

机译：SiC中的点缺陷是具有室温可控量子态的单缺陷单光子光谱的有前途的基础

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摘要

The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (V_(si)) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the ground state spin sublevels population of the V_(si)-related defects upon irradiation with unpolarized light. Spin ensemble of Vsi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field (ZF) ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make V_(si)-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.
机译：金刚石中氮空位（NV）中心的独特量子性质促使人们努力寻找碳化硅（SiC）中具有相似性质的缺陷，这可以扩展金刚石无法使用的此类系统的功能。此处进行的电子顺磁共振（EPR）和光学检测磁共振（ODMR）研究表明，SiC中与硅空位（V_（si））相关的点缺陷具有与金刚石中NV中心相似的性质，从而使它们一种在红外区域用于单缺陷和单光子光谱的有前途的量子系统。根据缺陷类型，温度，SiC多型性和晶体位置，已观察到两种相反的方案，即在用非偏振光照射时，V_（si）相关缺陷的基态自旋子能级群的光学对准。 Vsi相关缺陷的自旋集合显示出即使在室温下也以自旋态的相干叠加制备。零场（ZF）ODMR显示了通过施加射频场来操纵基态自旋种群的可能性。这些因素使SiC中与V_（si）相关的缺陷非常适合用于自旋电子学，量子信息处理和磁力计。

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