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CMOS MEMS Integration

机译：CMOS MEMS集成

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The "More than Moore" trend in the microelectronics industry is driving a renewed interest in mixed-physics CMOS MEMS integration. Integration becomes a necessity for multi-component microsystems, where interconnect issues are significant. Integration also drives down parasitic capacitances and provides opportunities for ultra-low-power microsystems. Several monolithic approaches exist that create MEMS from the layers in the back-end-of-line CMOS stack or by adding materials on top of the CMOS stack. These processes have been used to create a variety of microsystems including inertial sensors, RF tunable capacitors and probe manipulators. Process extensions include addition of sensitizing polymers by inkjet for gravimetric gas chemical sensors, etch of intermediate metal layers followed by polymers fill for capacitive chemical sensors, and plasma polymer deposition on micro-meshes to form diaphragms. The chip-stacking approach to integration is still in its infancy but benefits from the rapid maturation of technologies for chip thinning and for through-silicon vias.
机译：微电子行业的“摩尔定律”趋势正在引起人们对混合物理CMOS MEMS集成的新兴趣。对于互连问题很重要的多组件微系统来说，集成成为必要。集成还降低了寄生电容，并为超低功耗微系统提供了机会。存在几种单片方法，这些单片方法是通过在线后端CMOS堆栈中的层或通过在CMOS堆栈顶部添加材料来创建MEMS。这些过程已用于创建各种微系统，包括惯性传感器，RF可调电容器和探针操纵器。工艺扩展包括通过喷墨添加增感聚合物以用于重量气体化学传感器，蚀刻中间金属层，然后填充聚合物以用于电容化学传感器，以及在微网孔上沉积等离子聚合物以形成隔膜。集成的芯片堆叠方法仍处于起步阶段，但得益于芯片薄化和硅通孔技术的快速成熟。

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