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Recent Developments in Ion Implantation

机译：离子注入的最新发展

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The last few years have seen significant developments in ion implantation: Commercial implanters are now available with cryogenic capabilities to enable significant reductions in implant induced crystal damage; Plasma doping tools are now extensively used in fabs; Modified sources and new chemistries have been developed that allow some implants to be replaced by more exotic molecular implants to enable simultaneous co-implants and minimize end of range damage; Today's implanters give better dopant placement performance than ever before. These changes have been driven by CMOS scaling challenges, particularly at 32nm and 22nm, along with changes in thermal processing and the emergence of new implant applications. Details of some of these developments are given along with some explanation of the changes that have made them necessary.
机译：在过去的几年中，离子注入取得了长足的发展：现在可以使用具有低温功能的商用注入机来显着降低注入引起的晶体损伤；如今，等离子掺杂工具已广泛用于晶圆厂中。已经开发出改良的来源和新的化学方法，可以将某些植入物替换为更奇特的分子植入物，从而可以同时进行联合植入，并最大程度地减少射程的损害。如今的注入机提供了比以往更好的掺杂剂放置性能。这些变化是由CMOS缩放挑战（尤其是在32nm和22nm的CMOS缩放挑战）以及热处理工艺的变化和新植入应用的出现推动的。给出了其中一些开发的详细信息，并解释了使它们成为必需的更改。

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