Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-induced-drain Leakage Current

机译：基于栅极感应漏极泄漏电流变化的灵敏硅机械应力传感器的电势

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Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor with tensile mechanical stress bias and the underlying principle will also be discussed.

机译：基于硅压阻的机械应力传感器灵敏度有限。基于硅MOS晶体管的导通电流或截止电流或阈值电压的机械应力传感器的灵敏度也有限。在本文中，我们报告通过简单地监测具有拉伸机械应力偏置和基本原理的n沟道MOS晶体管的栅极感应漏极泄漏（GIDL）电流，可以大大提高基于硅的机械传感器的灵敏度。也将进行讨论。

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来源
《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications》|2011年|p.11-16|共6页
会议地点 Montreal(CA);Montreal(CA)
作者
W.S. Lau; Peizhen Yang; V. Ho; S.Y. Siah; L. Chan;
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作者单位

School of EEE, Nanyang Technological University, Singapore 639798;

School of EEE, Nanyang Technological University, Singapore 639798 ,Global Foundries, 60 Woodlands Industrial Park D St. 2, Singapore 738406;

Global Foundries, 60 Woodlands Industrial Park D St. 2, Singapore 738406;

Global Foundries, 60 Woodlands Industrial Park D St. 2, Singapore 738406;

Global Foundries, 60 Woodlands Industrial Park D St. 2, Singapore 738406;

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1. The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current [J] . W.S. Lau, Peizhen Yang, S.Y. Siah, Microelectronics & Reliability . 2012,第11期

机译：基于栅极感应漏极泄漏电流变化的灵敏硅机械应力传感器的拉伸应力偏置的作用
2. Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches [J] . C. Ryan, Z. Olszewski, R. Houlihan, Applied Physics Letters . 2015,第17期

机译：识别用于微机电系统电容开关的二氧化硅薄膜中的瞬态应力引起的泄漏电流
3. Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors [J] . Youn Sung Choi, Toshikazu Nishida, Scott E. Thompson Applied Physicsletters . 2008,第17期

机译：机械应力对p型硅金属氧化物半导体电容器中直接和陷阱辅助栅极泄漏电流的影响
4. Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-induced-drain Leakage Current [C] . W. S. Lau, Peizhen Yang, V. Ho, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications . 2011

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5. Magnetic resonance observations of defects involved in bias temperature instabilities and stress induced leakage currents in hafnium dioxide and silicon dioxide based metal-oxide-silicon structures. [D] . Ryan, Jason Thomas. 2010

机译：在二氧化f和基于二氧化硅的金属氧化物-硅结构中，与偏置温度不稳定性和应力引起的泄漏电流有关的缺陷的磁共振观察。
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机译：识别用于微机电系统电容开关的二氧化硅薄膜中的瞬态应力引起的泄漏电流

Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-induced-drain Leakage Current

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