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Advances in Si Ge Millisecond Processing: From SOI to Superconductivity and Carrier-mediated Ferromagnetism

机译：硅和锗毫秒处理技术的发展：从SOI到超导性和载流子介导的铁磁性

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This paper reviews the advances that millisecond thermal processing using flash lamps and lasers brings to the processing of the most advanced semiconductor materials, namely silicon and germanium, thus enabling the fabrication of novel microelectronic structures and materials. It will be demonstrated how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation for silicon-on-insulator, superconducting Ge and Si, and diluted ferromagnetic Ge, along with the technical reasons for using annealing times in the ms range are discussed in the context of state-of-the-art materials processing. Whereas these examples are based on solid phase processing, the more sophisticated approach regards on working with the liquid phase at the surface of solid substrates. As a recent example the controlled surface melting of a Ge enriched silicon substrate is reported.
机译：本文回顾了使用闪光灯和激光进行毫秒热处理对最先进的半导体材料（即硅和锗）的处理带来的进步，从而能够制造出新颖的微电子结构和材料。将证明这种发展如何转化为重要的实际应用，从而带来广泛的技术优势。在最新技术的背景下，讨论了绝缘体上硅，超导Ge和Si以及稀铁磁Ge形成超浅结的机会，以及使用ms范围内的退火时间的技术原因。材料加工。这些示例基于固相处理，而更复杂的方法则涉及在固相基质表面处理液相。作为最近的例子，报道了富Ge的硅衬底的受控表面熔化。

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