Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
Applied Materials, Maydan Technology Center Group, Santa Clara, CA 95054, USA;
机译:在非晶电介质层上的伪单晶,直接带隙Ge_(0.89)Sn_(0.11),用于单片3D光子集成
机译:3D单片集成:技术挑战和电气成果
机译:通过3D单片集成制造的SiGe-OI FinFET上InGaAs替代金属栅极(RMG)nFET的DC和RF表征
机译:3D Moscap车辆用于3D单片集成的侧壁电介质的电学特性
机译:用于单片3D集成的硅薄膜的准分子激光结晶。
机译:用于3D集成的INP通孔的侧壁斜坡控制
机译:应用在3D打印丝电气参数提取中的介电材料表征双线技术