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首页> 外文会议>Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6 >Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing
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Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing

机译：电活化退火后双注入硅的综合表征

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摘要

Phosphorous (P~+ 1.0 MeV, 4.0 × 10~13 cm(-2)) and boron (B~+ 10 keV, 3.0 x 10~14cm(-2)) implantedp-Si(l00) wafers were prepared to study electrical activation and dopant diffusion properties during thermal annealing. Dual implanted Si wafers were annealed for a wide range of annealing conditions (350-800℃, 60-150s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Systematic change of sheet resistance was measured in the dual implanted wafers annealed under different RTA conditions. P and B depth profiles measured by secondary ion mass spectroscopy (SIMS) did not show significant change in all RTA conditions. Room temperature photoluminescence (RTPL) spectra and Raman spectra were measured from all wafers under various excitation wavelengths (650 and 785 nm for RTPL and 363.8, 441.6, 457.9, 488.0 and 514.5 nm for Raman). RTPL spectra showed large variations in intensity and wavelength distribution corresponding to the resulting sheet resistance and RTA conditions. Raman spectra showed gradual increase of intensity and change of Raman peak positions and FWHM at the RTA temperatures for implant damage recovery and electrical activation of dual implanted Si wafers.
机译：准备了磷（P〜+ 1.0 MeV，4.0×10〜13 cm（-2））和硼（B〜+ 10 keV，3.0 x 10〜14cm（-2））注入的p-Si（100）晶片以研究电热退火过程中的活化和掺杂剂扩散特性。在市售的基于热壁的快速热退火（RTA）系统中，将双注入硅晶片在各种退火条件下（350-800℃，60-150s）进行退火。在不同的RTA条件下退火的双植入晶圆中，测量了薄膜电阻的系统变化。通过二次离子质谱（SIMS）测得的P和B深度剖面在所有RTA条件下均未显示明显变化。在各种激发波长（RTPL为650和785 nm，拉曼为363.8、441.6、457.9、488.0和514.5 nm）下，从所有晶片测量室温光致发光（RTPL）光谱和拉曼光谱。 RTPL光谱显示出强度和波长分布的较大变化，对应于所得的薄层电阻和RTA条件。拉曼光谱显示在RTA温度下强度逐渐增加，拉曼峰位置和FWHM发生变化，从而恢复了植入物的损伤并实现了双植入硅晶片的电激活。

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