Ge electroabsorption modulators and SiGe technology for optical interconnects

机译：用于电互连的Ge电吸收调制器和SiGe技术

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Ge/SiGe quantum well electroabsorption modulators grown on silicon through relaxed SiGe buffers had shown strong quantum-confined Stark effect (QCSE), even though Ge is an in-direct band gap semiconductor. The absorption characteristic near the direct band gap edge can be tuned by applying an electric field. QCSE is the most efficient optical modulation mechanism through direct light absorption and promising for reducing the device size and power consumption. The device fabrication here is based on Ge-rich SiGe technology, which is also commonly used for various silicon photonics applications. Here we will discuss Ge QCSE electroabsorption modulators as well as the consideration of SiGe process integration for optical interconnects.

机译：尽管Ge是一种间接带隙半导体，但通过松弛的SiGe缓冲剂在硅上生长的Ge / SiGe量子阱电吸收调制器显示出强大的量子限制斯塔克效应（QCSE）。可以通过施加电场来调节直接带隙边缘附近的吸收特性。 QCSE是通过直接光吸收而最有效的光学调制机制，有望减少设备尺寸和功耗。这里的器件制造基于富含锗的SiGe技术，该技术也普遍用于各种硅光子学应用。在这里，我们将讨论Ge QCSE电吸收调制器，以及对用于光学互连的SiGe工艺集成的考虑。

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来源
《Silicon Photonics II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6477》|2007年|64770X.1-64770X.8|共8页
会议地点 San JoseCA(US)
作者
Yu-Hsuan Kuo; Che-Wei Chang;
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作者单位

Department of Electrical Engineering and Graduate Institute of Electronics Engineering,National Taiwan University, Taipei 106, Taiwan;

Department of Electrical Engineering, Stanford University, Stanford, CA, USA 94305;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体光电器件;
关键词
ge optical modulators; silicon photonics; optical interconnects; SiGe technology; quantum-confined Stark effect; electroabsorption;

机译：ge光学调制器；硅光子学光学互连； SiGe技术；量子限制斯塔克效应；电吸收;

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专利

1. Electroabsorption and electrooptic effect in SiGe-Si quantum wells: realization of low-voltage optical modulators [J] . Qasaimeh O., Singh S. IEEE Journal of Quantum Electronics . 1997,第9期

机译：SiGe-Si量子阱中的电吸收和电光效应：低压光学调制器的实现
2. An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS [J] . Roth J. E., Palermo S., Helman N. C., Journal of Lightwave Technology . 2007,第12期

机译：使用直接集成到CMOS的低压电吸收调制器在1550 nm处建立光互连收发器
3. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects [J] . Papichaya Chaisakul, Vladyslav Vakarin, Jacopo Frigerio, Photonics . 2019,第1期

机译：Ge / SiGe量子阱光调制器，检测器和光互连发射器的最新进展
4. Ge electroabsorption modulators and SiGe technology for optical interconnects [C] . Yu-Hsuan Kuo, Che-Wei Chang, SPIE-The International Society for Optical Engineering Conference on Silicon Photonics . 2007

机译：用于光学互连的GE电气吸收调制器和SiGe技术
5. Electroabsorption modulators for CMOS compatible optical interconnects in III-V and group IV materials. [D] . Roth, Jonathan Edgar. 2007

机译：用于III-V和IV组材料的CMOS兼容光学互连的电吸收调制器。
6. Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators [O] . Younghyun Kim, Mitsuru Takenaka, Takenori Osada, -1

机译：应变诱导的SiGe光学调制器中的等离子体扩散效应和自由载流子吸收
7. Real-Time 100 Gb/s NRZ and EDB Transmission With a GeSi Electroabsorption Modulator for Short-Reach Optical Interconnects [O] . J. Verbist, M. Verplaetse, S. A. Srinivasan, 2018

机译：实时100 GB / S NRZ和EDB传输，具有GESI电吸收调制器，用于短到达光学互连

Ge electroabsorption modulators and SiGe technology for optical interconnects

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