A Physically-Based Compact Model for LDMOS Transistors

著录项

• 来源
  《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|271-274|共4页
• 会议地点 Leuven(BE);Leuven(BE)
• 作者

  James Victory; Colin C. McAndrew; Rainer Thoma; Kuntal Joardar; Margaret Kniffin; Steve Merchant; Diana Moncoqut;

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• 作者单位

  207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

  Motorola, Inc., 207, Route de Ferney, P. O. Box 15, 1218 Le Grand-Saconnex, Geneva, Switzerland;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 半导体器件制造工艺及设备;
• 关键词