The Modeling of Electromigration A New Challenge for TCAD ?

机译：电迁移建模TCAD的新挑战？

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It is argued that the modeling of electromigration at the microscopic level results into systems of equations which can be very well addressed by state-of-the-art TCAD methods.

机译：有人认为，在微观水平上对电迁移进行建模会形成方程组，而这些方程组可以通过最新的TCAD方法很好地解决。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|328-331|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
W. Schoenmaker; V. Petrescu;
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作者单位

IMEC, ASP division Kapeldreef 75 B-3001 Leuven, Belgium;

MESA Research Institute, University of Twente P.O. Box 217 7500 AE Enschede, Netherlands;

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原文格式 PDF
正文语种 eng
中图分类半导体器件制造工艺及设备;
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4. The Modeling of Electromigration A New Challenge for TCAD? [C] . W. Schoenmaker, V. Petrescu International conference on simulation of semiconductor devices and processes . 1998

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The Modeling of Electromigration A New Challenge for TCAD ?

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