3D-Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in P~- on P~+ Epitaxial Substrates

机译：对P〜+外延衬底上P〜-中的α-粒子产生的载流子收集增强场漏效应的3D模拟

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated the soft-error phenomena in p~- on p~+ epitaxial substrates using three dimensional device simulator. We demonstrate for the first time that the field-funneling on the collection of alpha-particle-generated carriers in a memory cell is enhanced in a p~- on p~+ epitaxial substrate in comparison with that in a p~--type Czochralski substrate. In addition, we have found the reason why the epitaxial-layer thickness dependence of the charge-collection in a memory cell is opposite to that in a TEG (Test Element Group) structure having a large charge-collection area.

机译：我们使用三维器件仿真器研究了p〜+外延衬底上p〜-上的软错误现象。我们首次证明，与p-型切克劳斯基基片相比，p-上的p- +外延基片增强了存储单元中由α-颗粒产生的载流子集合上的场漏。另外，我们发现了为什么存储单元中电荷收集的外延层厚度依赖性与具有大电荷收集面积的TEG（测试元件组）结构中的外延层厚度依赖性相反的原因。

著录项

来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|400-403|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
T. Kunikiyo; K. Sonoda; T. Yamashita; K. Ishikawa; T. Nishimura;
展开▼
作者单位

ULSI Development Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan;

ULSI Development Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan;

ULSI Development Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan;

ULSI Development Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan;

ULSI Development Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体器件制造工艺及设备;
关键词

相似文献

外文文献
中文文献
专利

1. Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells [J] . Photovoltaics, IEEE Journal of . 2014,第2期

机译：隧穿增强型多量子阱太阳能电池的载流子逃逸时间和与温度有关的载流子收集效率
2. Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering [J] . Kikuchi Ryosuke, Nakamura Toru, Kaneko Yasushi, CrystEngComm . 2019,第23期

机译：金红石型TiO2（101）型（101）基板上的NBON（100）薄膜的两步外延生长和RF反应溅射的残余载体浓度的降低
3. A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production [J] . Englhard M., Reuters B., Michaelis F. B., Materials science in semiconductor processing . 2017,第期

机译：一种新型真空外延升降（VELO），用于分离硬GAAs基板/载体系统，用于更绿色半导体LED生产
4. 3D-Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in P~- on P~+ Epitaxial Substrates [C] . T. Kunikiyo, K. Sonoda, T. Yamashita, International conference on simulation of semiconductor devices and processes . 1998

机译：3D模拟P〜+外延基板P〜+外延基板中α-粒子产生载流子收集的增强型漏斗效应
5. High Performance Glad Nanorod CuInxGa(1-x) Se2 Arrays with Enhanced Carrier Collection and Light Trapping for Photodetector Applications [D] . Brozak, Matthew. 2018

机译：用于光电探测器应用的高性能Glad Nanorod CuInxGa（1-x）Se2阵列，具有增强的载流子收集和光陷波功能
6. Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating [O] . Masao Sakuraba, Katsutoshi Sugawara, Takayuki Nosaka, 2017

机译：在没有基板加热的情况下通过ECR Ar等离子增强CVD生长的掺杂B原子层的Si薄膜的载流子特性
7. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate [O] . J. M. Zhan, P. G. Li, H. Liu, 2016

机译：载流子调整Nb掺杂srTiO3衬底上外延La0.67sr0.33mnO3薄膜的金属 - 绝缘体跃迁
8. Microsecond Carrier Lifetimes in Si Films Prepared on SiO2-coated Si Substrates by Zone-Melting Recrystallization and by Subsequent Epitaxial Growth [R] . Tsaur, B. Y., Fan, J. C. C., Geis, M. W. 1982

机译：通过区域熔融再结晶和随后的外延生长在siO 2涂覆的si衬底上制备的si薄膜中的微秒载流子寿命

3D-Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in P~- on P~+ Epitaxial Substrates

摘要

著录项

相似文献

相关主题

期刊订阅