Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells

机译：铁电非易失性存储单元的二维模拟

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An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.

机译：一种提高集成电路非易失性存储器性能的方法是利用铁电材料极化过程中的磁滞现象。为了对此和类似设备进行严格的分析，已经开发了一种适用于铁电效应的模型。我们描述了该模型，并在设备模拟器中显示了其实现的结果。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|368-371|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
K. Dragosits; M. Knaipp; S. Selberherr;
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作者单位

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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机译：共价功能化二维材料中的铁电：高迁移率半导体与非易失性存储器的集成
2. A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film [J] . Toshiyuki Nishihara, Yasuyuki Ito 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第3期

机译：一种用于未来硅存储的准矩阵铁电存储器-一种使用铁电膜的新型高密度，高速非易失性存储器
3. A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film [J] . Toshiyuki Nishihara, Yasuyuki Ito 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第3期

机译：用于未来硅存储的准矩阵铁电存储器 - 使用铁电膜的新型高密度和高速非易失性记忆
4. Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells [C] . K. Dragosits, M. Knaipp, S. Selberherr International conference on simulation of semiconductor devices and processes . 1998

机译：铁电非易失性存储器单元的二维模拟
5. Ferroelectric/electrode interfaces: Polarization switching and reliability of PZT capacitors in nonvolatile memories [D] . Chen, Ye (Mike) 2008

机译：铁电/电极接口：非易失性存储器中PZT电容器的极化切换和可靠性
6. Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film [O] . Ting Xu, Lanyi Xiang, Meili Xu, -1

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7. Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells [O] . K. Dragosits, S. Selberherr 1998

机译：铁电非易失性存储单元的二维模拟

Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells

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