Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors

机译：射频双极晶体管SiGe外延生长的仿真

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A simple simulation model for the in-situ doped chemical vapor deposition of Si_(1-x)Ge_x-epitaxial layers is presented that enables the calculation of the germanium and base doping profiles of modern rf-bipolar transistors from the process recipe, i.e. gas flows, deposition time and temperature. A first approach is based on the interpolation of experimental data characterizing the CVD-equipment. Although this gives already very good results for slowly varying GeH_4-flows, abrupt turn-offs of the gas flow result in too steep profiles as compared to experiments. An extension of the model is presented that solves this problem via the introduction of a germanium surface layer that feeds a slowly decaying germanium concentration in the deposited silicon even after the germane flow has been turned off.

机译：提出了Si_（1-x）Ge_x-外延层原位掺杂化学气相沉积的简单仿真模型，该模型能够根据工艺配方（即气体）计算现代射频双极晶体管的锗和基本掺杂分布流量，沉积时间和温度。第一种方法基于表征CVD设备的实验数据的内插。尽管对于缓慢变化的GeH_4流量已经给出了很好的结果，但是与实验相比，突然关闭气流会导致轮廓过于陡峭。提出了该模型的扩展，该模型的扩展通过引入锗表面层解决了该问题，该表面层甚至在锗烷流已关闭之后，仍可在沉积的硅中提供缓慢衰减的锗浓度。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|38-41|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
S. Marksteiner; H. Schaefer; T.F. Meister; A. Spitzer;
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作者单位

Siemens AG, Corporate Technology D-81730 Munich, Germany;

Siemens AG, Corporate Technology D-81730 Munich, Germany;

Siemens AG, Corporate Technology D-81730 Munich, Germany;

Siemens AG, Corporate Technology D-81730 Munich, Germany;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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1. Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth [J] . P. Pengpad, K. Osman, N.S. Lloyd, Microelectronic Engineering . 2004,第Jun期

机译：受限选择性外延生长的横向SiGe异质结双极晶体管：模拟和材料生长
2. Selective Epitaxial Growth Of B-doped Sige And Hcl Etch Of Si For The Formation Of Sige:b Recessed Source And Drain (pmos Transistors) [J] . H.H. Radamson, M. Kolahdouz, R. Ghandi, Thin Solid Films . 2008,第1期

机译：B掺杂Sige的选择性外延生长和Si的Hcl蚀刻以形成Sige：b凹陷的源极和漏极（pmos晶体管）
3. Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal-Oxide-Semiconductor Field-Effect Transistor [J] . Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第4B期

机译：大气原位掺杂砷的SiGe选择性外延生长以提高扩展N型金属氧化物半导体场效应晶体管
4. Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors [C] . S. Marksteiner, H. Schafer, T. F. Meister, International conference on simulation of semiconductor devices and processes . 1998

机译：RF-Bipolar晶体管SiGe外延生长的模拟
5. Selective epitaxial growth of Si and SiGe/Si heterostructures in a hot-wall tubular low pressure chemical vapor deposition system. [D] . Wang, Wei-Chung. 1997

机译：Si和SiGe / Si异质结构在热壁管状低压化学气相沉积系统中的选择性外延生长。
6. Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation [O] . R Ferragut, A Calloni, A Dupasquier, 2010

机译：SiGe / SOI外延半导体中的正电子An灭表征缺陷
7. Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors [O] . J. Ackaert, P. Chevalier, J. -l. Lohéac, 2015

机译：使用氮氧化物电介质最大化自对准双多晶硅siGe双极晶体管中选择性外延基层的生长速率

Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors

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