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首页> 外文会议>Simulation of semiconductor processes and devices 1998(SISPAD98) >Multiscale Modeling of the Implantation and Annealing of Silicon Devices
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Multiscale Modeling of the Implantation and Annealing of Silicon Devices

机译：硅器件植入和退火的多尺度建模

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Process simulators for silicon devices are benefiting from recent work on several models that cover vastly different length and time scales. In this talk we will focus on molecular dynamics (MD) and Monte Carlo (MC) models. We will describe these models and the applications of the results to commonly used simulators such as SUPREME-IV and PROPHET. Improvements in these continuum simulators are presently being implemented by the introduction of mechanisms and energetics derived from the more fundamental approaches. We will discuss MD methods, which can provide some of the parameters needed for the rates of diffusion, recombination and other phenomena modeled by the simulators. The MC model is less detailed and can simulate entire implantation and diffusion cycles. It is also atomistic in scale, and gives results on the dopant density, clusters and other properties. In addition, the model includes stochastic effects of implantation and diffusion, which are of increasing importance as device components are scaled down in size.
机译：硅器件的工艺仿真器得益于最近在涵盖极大不同长度和时间尺度的几种模型上的工作。在本讲座中，我们将重点介绍分子动力学（MD）和蒙特卡洛（MC）模型。我们将描述这些模型以及结果在常用仿真器（例如SUPREME-IV和PROPHET）中的应用。目前，通过引入从更基本的方法中获得的机制和能量学，对这些连续体模拟器进行了改进。我们将讨论MD方法，该方法可以提供扩散速率，重组速率和模拟器模拟的其他现象所需的一些参数。 MC模型不太详细，可以模拟整个植入和扩散周期。它在规模上也是原子的，并给出了掺杂剂密度，簇和其他性质的结果。此外，该模型还包括植入和扩散的随机效应，随着器件组件尺寸的缩小，这种效应变得越来越重要。

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