Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules

机译：大功率半导体模块中互连引起的分布寄生效应的连续场分析

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A practical methodology for the analysis of distributed parasitic effects is presented and demonstrated for bus bars connecting fast switching semiconductor devices in high power modules. Our study shows that only a full three-dimensional transient simulation of the entire module under realistic switching conditions can give the necessary insight in the time-dependent electromagnetic behavior. In order to illustrate the method, a problem encountered in an industrial application is solved.

机译：对于连接大功率模块中快速开关半导体器件的母线，提出并演示了一种分析寄生效应的实用方法。我们的研究表明，只有在实际开关条件下对整个模块进行完整的三维瞬态仿真，才能对与时间有关的电磁行为提供必要的了解。为了说明该方法，解决了工业应用中遇到的问题。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|340-343|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
P. Boehm; E. Falck; J. Sigg; G. Wachutka;
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作者单位

Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr.21, D-80290 Munich, Germany;

Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr.21, D-80290 Munich, Germany;

Siemens AG, Corporate Technology, Otto-Hahn-Ring 6, D-81739 Munich;

Institute for Physics of Electrotechnology, Munich University of Technology, Arcisstr.21, D-80290 Munich, Germany;

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原文格式 PDF
正文语种 eng
中图分类半导体器件制造工艺及设备;
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Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules

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