Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings

机译：垂直反应器中基于MOCVD的锆基涂层的流动和传热建模

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Flow and heat, transfer in a vertical reactor used for the MOCVD growth of zirconium based compounds is studied by computational modeling. The verification of computational predictions is done by temperature measurements. Flow regimes are compared with respect to the flow structure and temperature distribution in the reactor. The modeling study results in better understanding of the processes that determine growth rate uniformity and reproducibility.

机译：通过计算模型研究了用于MOCVD生长锆基化合物的立式反应器中的流动和热传递。通过温度测量来完成计算预测的验证。将流态相对于反应器中的流结构和温度分布进行比较。通过建模研究，可以更好地了解决定生长速率均匀性和可重复性的过程。

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《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|22-25|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
M. Dauelsberg; L. Kadinski; C. Schmidt; C. Allenbach; M. Morstein;
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作者单位

Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany;

Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany;

Electronic Devices, University of Erlangen-Nuernberg, Cauerstr. 6, D-91058 Erlangen, Germany;

Laboratory for Surface Science and Technology, Department of Materials, ETH Zuerich, CH-8092 Zuerich, Switzerland;

Laboratory for Surface Science and Technology, Department of Materials, ETH Zuerich, CH-8092 Zuerich, Switzerland;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings

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