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首页> 外文会议>Sixth International Conference on Solid State Lighting >White photoluminescence from SiN_X films prepared by plasma enhanced chemical vapor deposition
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White photoluminescence from SiN_X films prepared by plasma enhanced chemical vapor deposition

机译：通过等离子体增强化学气相沉积制备的SiN_X膜的白色光致发光

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Intense visible blue to red emissions were obtained from SiN_x thin films prepared by plasma enhanced chemical vapor deposition (PECVD) using SiH_4 and NH_3 as the source gases. A continuous blue shift of the photoluminescence (PL) peak from 660nm to 440nm was observed by increasing the NH_3 flow rate from 20 to 150sccm, while the flow rate of N_2 diluted 2% SiH_4 was fixed at 650sccm. This controllable PL was attributed to the quantum confinement effect of Si quantum dots (QDs) which were formed during the deposition process and embedded in the SiN_x films. White photoluminescence with multiple emission peaks was achieved for potential solid state lighting applications from multi-layered SiN_x films by changing the SiH_4/NH_3 ratio during the deposition process. This was attributed to a combination of Si quantum dots with different sizes within the different layers. Surface texturing of the thin film samples was conducted by potassium hydroxide (0.56%) etching the (100) Si substrate for 3～40 min at 80℃ before deposition. The reflectivity of the etched samples decreased with increasing etch time due to increased surface roughness. The extraction efficiency of light emission from the textured SiN_x thin films was significantly improved, owing to a depression of the internal reflection and interference effects. In addition, the elimination of the multiple emission peaks by surface texturing significantly affected the color coordinates of the output spectrum.
机译：从通过使用SiH_4和NH_3作为等离子体源的等离子体增强化学气相沉积（PECVD）制备的SiN_x薄膜获得了强烈的蓝色到红色发射光。通过将NH_3流速从20sccm增加到150sccm，可以观察到光致发光（PL）峰从660nm连续蓝移到440nm，而稀释2％SiH_4的N_2流速固定在650sccm。这种可控的PL归因于Si量子点（QD）的量子限制效应，这些量子点在沉积过程中形成并嵌入在SiN_x薄膜中。通过在沉积过程中改变SiH_4 / NH_3的比例，可以从多层SiN_x薄膜实现具有多个发射峰的白光致发光，以用于潜在的固态照明应用。这归因于在不同层内具有不同尺寸的Si量子点的组合。薄膜样品的表面纹理化是通过在沉积前于80℃下将氢氧化钾（0.56％）腐蚀（100）硅衬底3至40分钟。由于增加的表面粗糙度，蚀刻的样品的反射率随蚀刻时间的增加而降低。由于内反射和干涉效应的降低，从织构化的SiN_x薄膜发出的光的提取效率得到了显着提高。另外，通过表面纹理化消除多个发射峰显着影响了输出光谱的色坐标。

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