...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Photoluminescence of Tb~(3+) doped SiN_x films grown by plasma-enhanced chemical vapor deposition
【24h】

Photoluminescence of Tb~(3+) doped SiN_x films grown by plasma-enhanced chemical vapor deposition

机译：通过等离子体增强化学气相沉积法生长的Tb〜（3+）掺杂SiN_x薄膜的光致发光

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Room temperature photoluminescence (PL) properties of the Tb~(3+) ion implanted nonstoichiometric silicon nitride (Tb~(3+): SiN_x) and silicon dioxide (Tb~(3+): SiO_x) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1 h in flowing N_2 before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb~(3+) in the wavelength from 470 to 625 nm for both kinds of films. Moreover, after postannealing at 1000℃, the integrated PL intensity of Tb~(3+): SiN_x is much higher than that of Tb~(3+): SiO_x. The energy transfer from the defect related energy levels to the Tb~(3+) ions will enhance the ~5D_4→~7F_k (k=3-6) luminescence of Tb~(3+) ions.
机译：研究了Tb〜（3+）离子注入的非化学计量氮化硅（Tb〜（3+）：SiN_x）和二氧化硅（Tb〜（3+）：SiO_x）的室温光致发光（PL）特性。通过等离子体增强化学气相沉积来沉积膜，然后在注入之前或之后在流动的N_2中在不同温度下退火1小时。结果表明，由于两种薄膜的Tb〜（3+）的4f内跃迁在470-625 nm波长范围内均存在四个强烈的PL峰。此外，在1000℃下进行后退火后，Tb〜（3 +）：SiN_x的积分PL强度远高于Tb〜（3 +）：SiO_x。从缺陷相关能级到Tb〜（3+）离子的能量转移将增强Tb〜（3+）离子的〜5D_4→〜7F_k（k = 3-6）发光。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号