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Highly Efficient GaN Vertical Light Emitting Diode on Metal Alloy Substrate from Near UV to Green Color for Solid State Lighting Application

机译：从近紫外到绿色的金属合金衬底上的高效GaN垂直发光二极管，用于固态照明应用

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GaN vertical LED on metal alloy substrate (VLEDMS) has been successfully realized for wavelength spectrum from near UV to green color. Owing to the vertical structure and highly heat-conductive metal alloy substrate, VLEDMS exhibits an ultra high brightness and excellent reliability suitable for solid state lighting (SSL) application. A brightness of 80Lm/W using 450 nm chip mixed with yellow phosphor was achieved by optimization of LED structure epitaxy, chip process and packaging. Using 405 nm chip with polychromatic phosphor a 50 Lm/W white light with color rendering index better than 90 was obtained. We also can get very good uniform correlated color temperature from package with VLEDMS chip.

机译：金属合金衬底上的GaN垂直LED（VLEDMS）已成功实现了从近紫外线到绿色的波长光谱。由于垂直结构和高导热的金属合金基板，VLEDMS具有超高亮度和出色的可靠性，适用于固态照明（SSL）应用。通过优化LED结构外延，芯片工艺和封装，将450 nm芯片与黄色荧光粉混合使用，可达到80Lm / W的亮度。使用带有多色磷光体的405 nm芯片，可获得50 Lm / W的白光，其显色指数优于90。我们还可以从采用VLEDMS芯片的封装中获得非常好的均匀相关色温。

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来源
《Sixth International Conference on Solid State Lighting》|2006年|P.633703.1-633703.6|共6页
会议地点 San DiegoCA(US)
作者
Chao-Chen Cheng; Chen-Fu Chu; Wen-Huan Liu; Jiunn-Yi Chu; Hao-Chun Cheng; Feng-Hsu Fan; Jui-Kang Yen; Chuong Anh Tran; Trung Doan;
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作者单位

Semi-Photonics, 8F, No. 13, Ke-Jung Rd., Chunan Site, Hsinchu Science Park, Hsinchu, Taiwan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类电气照明;
关键词
LED; VLED; metal substrate; GaN; solid state lighting; CCT; CRI;

机译：LED; VLED;金属基板; GaN;固态照明; CCT; CRI;

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专利

1. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application [J] . Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Journal of Crystal Growth . 2007,第Jan期

机译：用于一般照明应用的金属合金基板上的高亮度GaN垂直发光二极管
2. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application [J] . Chen-Fu Chu, Chao-Chen Cheng, Wen-Huan Liu, Physica Status Solidi. C, Conferences and critical reviews . 2007,第1期

机译：用于一般照明应用的金属合金基板上的高亮度GaN垂直发光二极管
3. High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application [J] . Chu C.-F., Cheng C.-C., Liu W.-H., Proceedings of the IEEE . 2010,第7期

机译：用于一般照明应用的金属合金上的高亮度GaN垂直发光二极管
4. Highly Efficient GaN Vertical Light Emitting Diode on Metal Alloy Substrate from Near UV to Green Color for Solid State Lighting Application [C] . Chao-Chen Cheng, Chen-Fu Chu, Wen-Huan Liu, International Conference on Solid State Lighting . 2006

机译：高效的GaN垂直发光二极管在金属合金基材上，从接近UV到绿色，用于固态照明应用
5. Electrophoretic Deposition of Highly Efficient Phosphors for White Solid State Lighting using near UV-Emitting LEDs. [D] . Choi, Jae Ik. 2014

机译：使用近紫外发光LED电泳沉积用于白色固态照明的高效荧光粉。
6. Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates [O] . Wenliang Wang, Weijia Yang, Fangliang Gao, -1

机译：La0.3Sr1.7AlTaO6衬底上的高效GaN基发光二极管晶片
7. Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates [O] . Wenliang Wang, Weijia Yang, Fangliang Gao, 2015

机译：LA0.3SR1.7ATRAO6基材上高效的GaN基发光二极管晶片

Highly Efficient GaN Vertical Light Emitting Diode on Metal Alloy Substrate from Near UV to Green Color for Solid State Lighting Application

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