• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国卫生研究院文献>Scientific Reports >Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates
【2h】

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

机译：La0.3Sr1.7AlTaO6衬底上的高效GaN基发光二极管晶片

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations have revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves of GaN(0002) and GaN(10-12) are 190.1 and 210.2 arcsec, respectively, indicating that high crystalline quality GaN films have been obtained. The scanning electron microscopy and atomic force microscopy measurements have shown the very smooth p-GaN surface with the surface root-mean-square (RMS) roughness of 1.3 nm. The measurements of low-temperature and room-temperature photoluminescence help to calculate the internal quantum efficiency of 79.0%. The as-grown GaN-based LED wafers have been made into LED chips with the size of 300 × 300 μm2 by the standard process. The forward voltage, the light output power and the external quantum efficiency for LED chips are 19.6 W, 2.78 V, and 40.2%, respectively, at a current of 20 mA. These results reveal the high optoelectronic properties of GaN-based LEDs on LSAT substrates. This work brings up a broad future application of GaN-based devices.
机译：通过具有最佳生长条件的射频分子束外延（RF-MBE），在La0.3Sr1.7AlTaO6（LSAT）衬底上生长了高效的GaN基发光二极管（LED）晶片。详细描述了在LSAT衬底上制备的GaN基LED晶片的结构特性，表面形貌和光电特性。表征表明，GaN（0002）和GaN（10-12）的X射线摇摆曲线的半峰全宽（FWHM）分别为190.1和210.2 arcsec，表明高结晶质量的GaN薄膜具有已获得。扫描电子显微镜和原子力显微镜的测量结果表明，p-GaN表面非常光滑，表面均方根（RMS）粗糙度为1.3 nm。低温和室温光致发光的测量有助于计算内部量子效率为79.0％。通过标准工艺，将已生长的GaN基LED晶片制成尺寸为300×300μm 2 的LED芯片。 LED芯片的正向电压，光输出功率和外部量子效率分别为20 powermA，19.6 areW，2.78 V和40.2％。这些结果揭示了LSAT基板上GaN基LED的高光电性能。这项工作为GaN基器件带来了广阔的未来应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号