Substrate Biasing in Pulsed DC Reactive Sputtering of Dielectrics

机译：电介质的脉冲直流无功溅射中的衬底偏置

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DC reactive sputter deposition of dielectrics can be done using dc power pulsed in the range of 5-350 kHz. Although pulsed dc reactive sputtering (PDRS) does not solve the disappearing anode problem, it provides a deposition process without arcing. Pulsing plasma creates unusual conditions at the substrate, and requires a special approach to biasing. In this work, plasma properties, as well as substrate effects under various biasing conditions, were investigated. Deposition of alumina is used as an example of PDRS.

机译：可以使用在5-350 kHz范围内脉冲的直流功率来完成电介质的DC反应溅射沉积。尽管脉冲直流反应溅射（PDRS）不能解决消失的阳极问题，但它可提供无电弧的沉积工艺。脉冲等离子体会在基板上产生异常状况，并且需要特殊的偏压方法。在这项工作中，研究了等离子体性能以及在各种偏压条件下的衬底效应。氧化铝的沉积用作PDRS的示例。

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来源
《Society of Vacuum Coaters 46th Annual Technical Conference; May 3-8, 2003; San Francisco, California USA》|2003年|p.114-119|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
A. Freilich; A. Belkind; K. Becker; J. Lopez;
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作者单位

Stevens Institute of Technology, Hoboken, NJ;

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会议组织
原文格式 PDF
正文语种 eng
中图分类化学工业;
关键词
pulse bias; reactive sputtering pulse power; dielectrics;

机译：脉冲偏压;反应溅射脉冲功率;电介质;

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专利

1. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823K on nitrided sapphire substrates by pulsed DC reactive sputtering [J] . Ohtsuka Makoto, Takeuchi Hiroto, Fukuyama Hiroyuki Japanese journal of applied physics . 2016,第5S期

机译：脉冲直流反应溅射对氮化蓝宝石衬底上823K沉积AlN膜的溅射压力和结晶品质的影响。
2. Adhesion and tribological properties of TiTaBN coatings with a graded interlayer deposited by pulsed DC biased and continuous dc biased magnetron sputtering [J] . Baran Ozlem, Efeoglu Ihsan, Hardell Jens, Journal of Adhesion Science and Technology: The International Journal of Theoredtical and Basic Aspects of Adhesion Science and Its Applications in All Areas of Technology . 2015,第17a20期

机译：脉冲直流偏置和连续直流偏置磁控溅射沉积具有梯度中间层的TiTaBN涂层的附着力和摩擦学性能
3. Substrate Biasing Effect on the Physical Properties of Reactive RF-Magnetron-Sputtered Aluminum Oxide Dielectric Films on ITO Glasses [J] . Ling Yan Liang, Hong Tao Cao, Quan Liu ACS applied materials & interfaces . 2014,第4期

机译：衬底偏置对ITO玻璃上反应性RF磁控溅射氧化铝介电膜物理性能的影响
4. Substrate Biasing in Pulsed DC Reactive Sputtering of Dielectrics [C] . A. Freilich, A. Belkind, K. Becker, SVC Annual Technical Conference . 2003

机译：脉冲直流反应溅射中的基板偏置电介质
5. Pulsed DC reactive magnetron sputtering of dielectrics. [D] . Freilich, Alfred. 2005

机译：脉冲直流电抗磁控管溅射电介质。
6. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior [O] . Chunzi Zhang, Ozan Gunes, Yuanshi Li, 2019

机译：直流磁控溅射过程中衬底偏置对VO2薄膜质量及其绝缘体-金属过渡行为的影响
7. Fabrication and Characterization of Hydrophilic TiO2Thin Films on Unheated Substrates Prepared by Pulsed DC Reactive Magnetron Sputtering [O] . M. Horprathum, P. Chindaudom, P. Limnonthakul, 2010

机译：通过脉冲DC反应磁控溅射制备的加热底物中亲水性TiO2膜的制备与表征

Substrate Biasing in Pulsed DC Reactive Sputtering of Dielectrics

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