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首页> 外文会议>Society of Vacuum Coaters Annual Technical Conference; 20050423-28; Denver,CO(US) >Gas Diffusion Barriers on Polymers Using Al_2O_3 Atomic Layer Deposition
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Gas Diffusion Barriers on Polymers Using Al_2O_3 Atomic Layer Deposition

机译：使用Al_2O_3原子层沉积的聚合物上的气体扩散壁垒

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摘要

Polymer substrates are needed for flexible organic devices such as organic light-emitting diodes (OLEDs). However, gas permeability in polymers is high and gas diffusion barriers are required to reduce H_2O and O_2 permeability. Inorganic films such as SiO_2 and Al_2O_3, can have extremely low gas diffusion rates and may be excellent gas diffusion barriers if they are continuous and pinhole-free. Low temperature Al_2O_3 atomic layer deposition (ALD) has been investigated on PEN and polyimide films. Al_2O_3 ALD films were deposited on these polymer substrates at temperatures between 100-175℃ with thicknesses between 1-25 nm. MOCON measurements yielded O_2 permeation rates below the MOCON test limit of 5 x 10~(-3) cc/m~2/day for Al_2O_3 ALD films ≥ 5 nm thick. A sensitive new testing method has been employed to measure the extremely low H_2O permeation rates obtained after Al_2O_3 ALD. This test has measured water permeation rates of ～1 x 10~(-3) g/m~2/day for 26 nm thick Al_2O_3 ALD films on these polymers. Results are presented for the dependence of the H_2O permeation rate on Al_2O_3 ALD film thickness and for single-sided and double-sided Al_2O_3 ALD films on the polymers.
机译：柔性有机器件（例如有机发光二极管（OLED））需要聚合物基板。然而，聚合物中的气体渗透性很高，并且需要气体扩散阻挡层以降低H_2O和O_2的渗透性。无机薄膜（例如SiO_2和Al_2O_3）具有极低的气体扩散速率，并且如果连续且无针孔，则可能是出色的气体扩散屏障。研究了在PEN和聚酰亚胺薄膜上的低温Al_2O_3原子层沉积（ALD）。 Al_2O_3 ALD薄膜在100-175℃之间的温度下沉积在这些聚合物基板上，厚度在1-25 nm之间。对于≥5 nm厚的Al_2O_3 ALD膜，MOCON测量得出的O_2渗透率低于MOCON测试极限5 x 10〜（-3）cc / m〜2 /天。已采用一种灵敏的新测试方法来测量Al_2O_3 ALD后获得的极低的H_2O渗透率。该测试对这些聚合物上的26 nm厚Al_2O_3 ALD膜测得的水渗透率约为1 x 10〜（-3）g / m〜2 /天。给出了H_2O渗透速率对Al_2O_3 ALD膜厚度的依赖性以及在聚合物上的单面和双面Al_2O_3 ALD膜的结果。

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