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首页> 外文会议>Society of Vacuum Coaters Annual Technical Conference; 20070428-0503; Louisville,KY(US) >Deposition and Characterization of Cr-N and Cr-Si-N Coatings Deposited by Means of Reactive Magnetron Sputtering Assisted by RF Plama
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Deposition and Characterization of Cr-N and Cr-Si-N Coatings Deposited by Means of Reactive Magnetron Sputtering Assisted by RF Plama

机译：射频等离子体辅助反应磁控溅射沉积Cr-N和Cr-Si-N涂层的表征

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摘要

Cr-N and Cr-Si-N coatings were deposited using the magnetron sputtering of pure chromium and Cr-Si composite targets in reactive Ar/N, mixtures. Concerning the deposition of CrN films, applying a RF bias of -100 V to the substrate leads to the maximum value of internal compressive stress (2.2 Gpa) and to hardness close to 1300 Hv_(0.5). However for these sputtering conditions the re-sputtering of nitrogen is clearly observed, leading to the formation of an understoichiometric film as well as to a high surface roughness. The same sputtering conditions were considered for the deposition of Cr-Si-N films with an increasing content of silicon. All the coatings are dense and it is shown that the addition of a critical silicon content close to 1 at.% could correspond to the formation of a nanocomposite structure. The evolution of I( 111 )/I(220) and of the resistivity of the films seems to confirm this results. However, silicon contents close to 3 at.% needs to be reached to observed the strong increase of hardness usually reported for nanocomposite structure.
机译：Cr-N和Cr-Si-N涂层是使用磁控溅射法将纯铬和Cr-Si复合靶材在活性Ar / N混合物中沉积而成的。关于CrN膜的沉积，对基板施加-100 V的RF偏压会导致内部压缩应力的最大值（2.2 Gpa），并且硬度接近1300 Hv_（0.5）。然而，对于这些溅射条件，清楚地观察到氮的重新溅射，导致形成化学计量不足的膜以及高表面粗糙度。考虑了相同的溅射条件，用于沉积硅含量不断增加的Cr-Si-N薄膜。所有涂层都是致密的，并且表明临界硅含量的增加接近1at。％可以对应于纳米复合结构的形成。 I（111）/ I（220）的演变以及薄膜的电阻率似乎证实了这一结果。但是，需要达到接近3 at。％的硅含量才能观察到通常针对纳米复合结构报道的硬度的强劲增长。

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