High Power 1470-nm Semiconductor Laser Bars and Stacks

机译：大功率1470-nm半导体激光棒和堆叠

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High-power semiconductor lasers operating in the 1470 nm wavelength band are now reaching performance levels required for military applications. We present data from InP-based lasers that were recently developed at nLight. Single-emitter devices achieve output power greater than 3 W and electrical-to-optical conversion efficiency greater than 35 percent. Single bars on water-cooled copper-microchannel heatsinks produce 40 watts of cw power. Collimated water-cooled multiple-bar stacks deliver greater than 600 W of power at 1470 nm with a half-angle divergence of 0.16 degrees. These stacks achieve a high degree of brightness through very precise opto-mechanical assembly, polarization beam-combining, and beam interleaving.

机译：现在，工作在1470 nm波段的大功率半导体激光器已达到军事应用所需的性能水平。我们展示了nLight最近开发的基于InP的激光器的数据。单发射器器件的输出功率大于3 W，电光转换效率大于35％。水冷铜微通道散热器上的单个条产生40瓦的连续波功率。准直的水冷式多棒堆叠在1470 nm处提供大于600 W的功率，半角散度为0.16度。这些堆叠通过非常精确的光机械组装，偏振光束合并和光束交错实现了很高的亮度。

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来源
《Solid State and Diode Laser Technology Review(SSDLTR 2004)》|2004年|P.Diode3.1-Diode3.4|共4页
会议地点 AlbuquerqueNM(US)
作者
P.A. Crump; T.R Crum; M.A. DeVito; J. Farmer; M. Grimshaw; Z. Huang; S.A. Igl; J. Wang; W. Dong;
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nLight Photonics Corporation 5408 NE 88th Street, Building E Vancouver, WA 98665;

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原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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High Power 1470-nm Semiconductor Laser Bars and Stacks

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