Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method

机译：使用光电化学方法制造的栅极凹入式AlGaN / GaN MOS-HEMT的电性能

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Gate-recessed AlGaN/GaN MOS-HEMTs were fabricated using a photoelectrochemical (PEC) method to form the recessed structure and to directly grow gate insulator on the recessed surface. The resulting devices exhibited better performances than conventional one without gate recess, including a saturation drain-source current of 642 mA/mm, and an off-state breakdown voltage larger than -100V. The normalized noise power spectra of both kinds of devices at the saturation region were well-fitted by the 1/f law and the Hooge's coefficient α in both devices was about 10~(-4), demonstrating that PEC wet etching is an effective way to achieve a damage-free surface and to improve the DC characteristics of the MOS-HEMTs.

机译：使用光电化学（PEC）方法制造出栅极凹陷的AlGaN / GaN MOS-HEMT，以形成凹陷结构，并在凹陷表面上直接生长栅极绝缘体。所得到的器件表现出比没有栅极凹口的传统器件更好的性能，包括642 mA / mm的饱和漏极-源极电流和大于-100V的截止态击穿电压。两种器件在饱和区的归一化噪声功率谱均通过1 / f定律很好地拟合，两种器件的胡格系数α约为10〜（-4），说明PEC湿法刻蚀是一种有效的方法。以实现无损伤的表面并改善MOS-HEMT的直流特性。

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《State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50)-and-processes at the semiconductor solution interface 3》|2009年|73-78|共6页
会议地点 San Francisco CA(US);San Francisco CA(US);San Francisco CA(US)
作者
Ya-Lan Chiou; Nan-Teng Shiau; Li-Hsien Huang; Li-Ren Lou; Ching-Ting Lee;
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Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China;

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China;

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China;

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China;

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China;

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Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method

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