AlGaN/GaN HEMTs having a gate contact on a GaN based cap segment and methods of fabricating same

• 1. 基于Si衬底AlGaN/GaN异质结基的增强型HEMT器件及其制造方法 [P] . 中国专利： CN106711212B . 2018.12.11
• 2. 基于AlGaN/GaN HEMT的欧姆接触电极的制造方法 [P] . 中国专利： CN106373874A . 2017-02-01
• 3. ALGAN/GAN HEMTS HAVING A GATE CONTACT ON A GAN BASED CAP SEGMENT AND METHODS OF FABRICATING THE SAME [P] . 欧洲知识产权局专利： EP1405349B1 . 2012-08-08

  机译： 在基于GAN的CAP段上具有门接触的ALGAN / GAN折边及其制造方法

• 4. ALGAN/GAN HEMTS HAVING A GATE CONTACT ON A GAN BASED CAP SEGMENT AND METHODS OF FABRICATING THE SAME [P] . 欧洲知识产权局专利： EP1405349A2 . 2004-04-07

  机译： 在基于GAN的CAP段上具有门接触的ALGAN / GAN折边及其制造方法

• 5. AlGaN/GaN HEMTs having a gate contact on a GaN based cap segment and methods of fabricating same [P] . 韩国专利： KR20040013136A . 2004-02-11

  机译： 在基于GaN的帽段上具有栅极触点的AlGaN / GaN HEMT及其制造方法

• 1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
• 2. Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) [J] . Masachika Toguchi, Kazuki Miwa, Fumimasa Horikiri, Journal of Applied Physics . 2021,第2期
• 3. Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor [J] . Lalinsky T., Vanko G., Vallo M., Sensors and Actuators, A. Physical . 2011,第2期
• 4. Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor [J] . Abdulsalam Azwar, Karumuri Naveen, Dutta Gourab IEEE Transactions on Electron Devices . 2020,第9期
• 5. Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer [C] . Wakejima A., Ando A., Watanabe A., Annual Device Research Conference . 2015
• 6. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016
• 7. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure [O] . Mastura Shafinaz Zainal Abidin, Abdul Manaf Hashim, Maneea Eizadi Sharifabad, 2011
• 8. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013
• 9. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

• 1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi ,Denggui Wang ,Jianjun Zhou . 纳米技术与精密工程 . 2020,第004期
• 2. Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs [J] . Changxi Chen ,Quan Wang ,Wei Li . 半导体学报:英文版 . 2021,第9期
• 3. AlGaN/AlN_a/GaN/AlN_b/GaN HEMT结构材料生长及性能表征 [J] . 肖红领 ,王晓亮 ,张明兰 . 半导体技术 . 2008,第S1期
• 4. MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构(英文) [J] . 王晓亮 ,胡国新 ,马志勇 . 半导体学报：英文版 . 2006,第9期
• 5. GaN帽层对AlGaN/GaN HEMT肖特基特性的影响 [C] . 赵妙 ,刘新宇 ,袁婷婷 . 第十五届全国化合物半导体材料、微波器件和光电器件学术会议 . 2008
• 6. 新型本征GaN帽层AlGaN/GaN HEMTs结构设计及实验研究 [A] . 谢慎隆 . 2018