Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

Masachika Toguchi; Kazuki Miwa; Fumimasa Horikiri; Noboru Fukuhara; Yoshinobu Narita; Osamu Ichikawa; Ryota Isono; Takeshi Tanaka; Taketomo Sato

首页> 外文期刊>Journal of Applied Physics >Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

【24h】

Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

机译：用于制造高度均匀的凹槽AlGaN / GaN高电子移动晶体管（HEMT）的自终止接触光电化学（CL-PEC）蚀刻

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in V_(th), the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal-insulator-semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the V_(th) of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations.

机译：非接触式光电化学（CL-PEC）蚀刻用于制造凹陷栅极/ GaN高电子迁移率晶体管（HEMT）。在CL-PEC蚀刻期间观察到蚀刻的自终止，其残留厚度在同一芯片上总体均匀值为6nm。在治疗后氢氧化氢氧化铵后，蚀刻表面的根平均方形粗糙度约为0.4nm，其平滑度与未抑制的表面的光滑度相当。凹陷 - 肖特基HEMTS在V_（TH）中显示出漏极泄漏电流的抑制，以及与平面栅极HEMT相比的借调漏电流的抑制，以及亚阈值的改善。通过施加金属绝缘体 - 半导体（MIS） - 晶体结构，栅极和漏极泄漏电流显着降低，导致输入动态范围增加。此外，CL-PEC蚀刻型舒张骨垫和凹陷的MIMT的V_（TH）的标准偏差（σ）分别非常小，5.5和16.7mV。这些结果表明，CL-PEC蚀刻工艺是对常时装置操作具有优异均匀性的凹陷栅极/ GaN的制造。

著录项

来源
《Journal of Applied Physics》 |2021年第2期|024501.1-024501.10|共10页
作者
Masachika Toguchi; Kazuki Miwa; Fumimasa Horikiri; Noboru Fukuhara; Yoshinobu Narita; Osamu Ichikawa; Ryota Isono; Takeshi Tanaka; Taketomo Sato;
展开▼
作者单位

Research Center for Integrated Quantum Electronics Hokkaido University Sapporo Hokkaido 060-0813 Japan;

Research Center for Integrated Quantum Electronics Hokkaido University Sapporo Hokkaido 060-0813 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 319-1418 Japan;

Research Center for Integrated Quantum Electronics Hokkaido University Sapporo Hokkaido 060-0813 Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Fabrication of High-Uniformity and High-Reliability Si₃N₄/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry [J] . Hui Sun, Maojun Wang, Jianguo Chen, Electron Devices, IEEE Transactions on . 2018,第11期

机译：在150 mm硅铸造厂中采用自终止介电刻蚀工艺制备高均匀性和高可靠性的Si _{3 N _{4 / AlGaN / GaN MIS-HEMT}}
2. Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching [J] . Y. Gao, I. Ben-Yaacov, U. K. Mishra, Journal of Applied Physics . 2004,第11期

机译：光电化学湿法刻蚀制备AlGaN / GaN电流孔径垂直电子晶体管（CAVET）的优化
3. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching [J] . Gao Y., Stonas A.R., Ben-Yaacov I., Electronics Letters . 2003,第1期

机译：通过光电化学湿法刻蚀制备的AlGaN / GaN电流孔径垂直电子晶体管
4. Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing [C] . Keisuke Uemura, Manato Deki, Yoshio Honda, 応用物理学会秋季学術講演会;応用物理学会 . 2018

机译：通过光电化学刻蚀和后金属化退火制备的隐栅AlGaN / GaN高电子迁移率晶体管（HEMT）
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application [O] . Ya-Chun Chang, Yu-Li Ho, Tz-Yan Huang, 2021

机译：用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
7. Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors [O] . Samaneh Sharbati, Iman Gharibshahian, Thomas Ebel, 2021

机译：凹陷栅极GaN高电子迁移率晶体管二维电子气体电荷密度的分析模型
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Self-terminating contactless photoelectrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

摘要

著录项

相似文献

相关主题

期刊订阅