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首页> 外文会议>Structure-Property Relationships of Oxide Surfaces and Interfaces II >Chemical Structure of N Atoms Incorporated Into 1 nm-thick SiO_2/Si as Revealed with the Dissolution and Hydrogenation in Hydrofluoric Acid
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Chemical Structure of N Atoms Incorporated Into 1 nm-thick SiO_2/Si as Revealed with the Dissolution and Hydrogenation in Hydrofluoric Acid

机译：N原子掺入1 nm厚SiO_2 / Si的化学结构及其在氢氟酸中的溶解和氢化反应

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By detecting vibrational frequencies for N-H structures, the chemical states of N atoms at silicon nitride on silicon, SiN/Si, and silicon oxide with nitrogen on silicon, SiO(N)/Si, systems were deduced after being chemically decollated with H atoms in dilute HF solution. Using the fact that the decollation was associated with the dissolution of these films, we obtained their depth profile. The frequency was increased to an extent of 10 cm~(-1) by the existence of a thin oxide layer between the SiN layer and the Si substrate. The N-H structure bound to the Si substrate was observed at 3390 cm~(-1) just before the completely removal of the surface layer. We also observed the NH structure of crystal SiN form, whose frequency was unchanged to be 3325 cm~(-1). The same technique was applied to detect the chemical structure of the N atoms in an ultra-thin SiO(N) with 5% of the N atoms. The frequency peak of the bulk N structure was observed with that of OH structures. The peak was shifted from 3375 cm~(-1) to 3405 cm~(-1) at the interface region, suggesting densification of the film in the interface region. Prior to complete removal, we observed the surface state of the N atoms and the H atoms. Then the frequency of the NH was unaffected by the film formed with the various methods. No SiH structure was observed on the resultant film surface during etching.
机译：通过检测NH结构的振动频率，推导了硅中的H原子与硅原子化学分离后，推导了硅上的氮化硅SiN / Si和硅上的氮与硅氧化物SiO（N）/ Si时N原子的化学态。稀HF溶液。利用脱缩与这些膜的溶解相关的事实，我们获得了它们的深度分布。通过在SiN层和Si衬底之间存在薄的氧化物层，频率增加到10cm-1（-1）的程度。在完全去除表面层之前，在3390 cm〜（-1）处观察到与Si衬底结合的N-H结构。我们还观察到了SiN晶型的NH结构，其频率没有变化，为3325 cm〜（-1）。使用相同的技术来检测N原子为5％的超薄SiO（N）中N原子的化学结构。观察到本体N结构的频率峰与OH结构的频率峰。峰在界面区域从3375 cm〜（-1）移动到3405 cm〜（-1），表明界面区域的膜致密化。在完全去除之前，我们观察了N原子和H原子的表面状态。然后，NH的频率不受通过各种方法形成的膜的影响。在蚀刻期间，在所得膜表面上未观察到SiH结构。

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