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首页> 外文会议>Structure-Property Relationships of Oxide Surfaces and Interfaces II >Effects of the Amorphous Oxide Intergranular Layer Structure and Bonding on the Fracture Toughness of a High Purity Silicon Nitride
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Effects of the Amorphous Oxide Intergranular Layer Structure and Bonding on the Fracture Toughness of a High Purity Silicon Nitride

机译：非晶氧化物晶界结构和键合对高纯氮化硅断裂韧性的影响

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The microstructural evolution and structural characteristics and transitions in the thin grain-boundary oxide films in a silicon nitride ceramic, specifically between two adjacent grains and not the triple junctions, are investigated to find their effect on the macroscopic fracture properties. It is found that by heat treating a model Si_3N_4-2wt% Y_2O_3 ceramic for ～200 hr at 1400℃ in air, the fracture toughness can be increased by ～100%, coincident with a change in fracture mechanism from transgranular to intergranular. Structural phase transformations occur in the thin grain boundaries during oxidation that are revealed by XRD, EDX, Raman and EELS analyses. They affect the local bonding of atoms. It is concluded that only specific crystal "building blocks", i.e., tetrahedra, are transformed along the grain boundary and the resulting difference in the atomic structure of the oxide interface is seen directly to alter the macroscopic fracture behavior.
机译：研究了氮化硅陶瓷中，特别是两个相邻晶粒之间，而不是三重结之间的薄晶界氧化膜的微观结构演变，结构特征和转变，以发现它们对宏观断裂性能的影响。结果表明，通过在空气中1400℃下对Si_3N_4-2wt％Y_2O_3型陶​​瓷进行约200小时的热处理，可以使断裂韧性提高约100％，这与断裂机理从晶界向晶间转变有关。 XRD，EDX，Raman和EELS分析表明，在氧化过程中，细晶边界发生了结构相变。它们影响原子的局部键合。可以得出结论，只有特定的晶体“构件”（即四面体）沿着晶界发生转变，并且可以直接看到氧化物界面原子结构的差异，从而改变了宏观断裂行为。

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