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Production of a semiconductor structure comprises preparing a semiconductor substrate, forming a silicon nitride layer on the substrate, forming a silicon dioxide layer on the silicon nitride layer, and etching the silicon dioxide layer
Production of a semiconductor structure comprises preparing a semiconductor substrate, forming a silicon nitride layer on the substrate, forming a silicon dioxide layer on the silicon nitride layer, and etching the silicon dioxide layer
Production of semiconductor structure comprises preparing semiconductor substrate (1), forming silicon nitride layer (3) on surface (OF1) of substrate, forming silicon dioxide layer (10) on surface (OF2, OF3) of silicon nitride layer, and selectively isotropically etching silicon dioxide layer on one surface of silicon nitride layer in inductively coupled plasma etch step (E2) using gas mixture containing CF9 and inert gas. Production of a semiconductor structure comprises preparing a semiconductor substrate (1), forming a silicon nitride layer (3) on the surface (OF1) of the substrate, forming a silicon dioxide layer (10) on the surface (OF2, OF3) of the silicon nitride layer, and selectively isotropically etching the silicon dioxide layer on one surface of the silicon nitride layer in a plasma etching step (E2) in an inductively coupled plasma etching chamber with a very low bias applied to the cathode and using a gas mixture containing CF9 and an inert gas, especially Ar.
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