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ETCHING OF LAYER CONTAINING SILICON DIOXIDE FORMED ON SEMICONDUCTOR SUBSTRATE, IMPROVEMENT OF OXIDE-NITRIDE ETCH SELECTIVITY IN ETCHING OF LAYER CONTAINING BOROPHOSPHOSILICATE GLASS, AND DRAM
ETCHING OF LAYER CONTAINING SILICON DIOXIDE FORMED ON SEMICONDUCTOR SUBSTRATE, IMPROVEMENT OF OXIDE-NITRIDE ETCH SELECTIVITY IN ETCHING OF LAYER CONTAINING BOROPHOSPHOSILICATE GLASS, AND DRAM
PROBLEM TO BE SOLVED: To suppress metal contamination in a layer containing silicon dioxide and prevent electric short-circuits near a contact hole due to carelessness, when etching a semiconductor substrate through a layer containing silicon dioxide formed on the semiconductor substrate in a plasma treatment chamber in the manufacture of an integrated circuit. ;SOLUTION: In this method, a substrate is placed in a plasma treatment chamber, and then an etchant source gas is poured into the chamber. The etchant source gas contains C4F8 and added gases other than carbon monoxide (CO) and the added gases contains molecules having both oxygen atoms and carbon atoms. Then, plasma is generated from the etchant source gas, and the substrate is etched at least partially through a layer, including a silicon dioxide.;COPYRIGHT: (C)1999,JPO
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机译：解决的问题：当在等离子体处理室中通过在半导体衬底上形成的包含二氧化硅的层蚀刻半导体衬底时，为了抑制包含二氧化硅的层中的金属污染并防止由于粗心而导致的接触孔附近的电短路。在集成电路的制造中。 ;解决方案：在这种方法中，将衬底放置在等离子体处理室中，然后将蚀刻剂源气体倒入该室中。蚀刻剂源气体包含C 4 F 8 和一氧化碳（CO）以外的添加气体，并且添加的气体包含具有氧原子和碳原子的分子。然后，从蚀刻剂源气体中产生等离子体，并通过包括二氧化硅的层至少部分地蚀刻衬底。版权所有：（C）1999，JPO
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