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首页> 外文会议>Structure-Property Relationships of Oxide Surfaces and Interfaces II >INFLUENCE OF STRUCTURE AND CHEMISTRY ON PIEZOELECTRIC PROPERTIES OF PZT IN A MEMS POWER GENERATION APPLICATION
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INFLUENCE OF STRUCTURE AND CHEMISTRY ON PIEZOELECTRIC PROPERTIES OF PZT IN A MEMS POWER GENERATION APPLICATION

机译：结构和化学性质对MEMS发电应用中PZT压电性能的影响

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摘要

PZT films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure, orientation, chemistry and PZT/PZT crystallization interfaces on the piezoelectric output of these films. By varying the chemistry of the film from Zr-rich to Ti-rich the film orientation increased towards {h00}. PZT with 60 wt% Ti exhibited tetragonality and produced greater electrical output at a given strain than the rhombohedral films with concentrations less than 50 wt% Ti. Multiple steps of solution deposition left identifiable PZT/PZT interfaces within the film. TEM, FESEM, and Auger spectroscopy were used to characterize these interfaces, which form upon crystallization of the amorphous PZT film. Internal PZT interfaces are associated with both structural defects (voids) as well as chemical variations such as Pb deficiencies.
机译：使用溶液沉积技术生长1至3μm厚的PZT膜，以研究晶体结构，取向，化学性质以及PZT / PZT结晶界面对这些膜的压电输出的影响。通过从富Zr到富Ti改变膜的化学性质，膜取向朝着{h00}增加。具有60 wt％Ti的PZT在给定的应变下比具有小于50 wt％Ti的菱面体膜具有四方性并产生更大的电输出。溶液沉积的多个步骤在薄膜内留下了可识别的PZT / PZT界面。 TEM，FESEM和俄歇光谱用于表征这些界面，这些界面是在非晶PZT薄膜结晶时形成的。内部PZT界面与结构缺陷（空隙）以及化学变化（例如Pb缺陷）相关。

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