Study of Pore Architecture in Silicon Oxide Thin Films by Variable-energy Positron Annihilation Spectroscopy

机译：可变能量正电子An没光谱研究氧化硅薄膜中的孔结构

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Application of porous silicon oxide thin films to nanotechnology is under intensive investigation. Introducing a large amount of nano pores into a silicon oxide matrix is important to develop low-κ dielectrics for future ultra-large-scale integrated circuits (ULSI). In this work, we applied variable-energy positron annihilation to the characterization of porous silicon oxide thin films fabricated on silicon wafers by sputtering and spincoating. It was found that the sputtered film has higher open pore connectivity than that of the spincoated low-κ film.

机译：多孔氧化硅薄膜在纳米技术中的应用正在深入研究中。在氧化硅基质中引入大量的纳米孔对于开发用于未来超大规模集成电路（ULSI）的低κ电介质很重要。在这项工作中，我们将可变能量正电子an灭应用于通过溅射和旋涂在硅晶片上制造的多孔氧化硅薄膜的表征。发现溅射的膜比旋涂的低κ膜具有更高的开孔连通性。

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来源
《Structure-Property Relationships of Oxide Surfaces and Interfaces II》|2002年|p.97-102|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Kenji Ito; Yoshinori Kobayashi; Runsheng Yu; Kouichi Hirata; Hisashi Togashi; Ryoichi Suzuki; Toshiyuki Ohdaira; M. Egami; H. Arao; C. Sakurai; A. Nakashima; M. Komatsu;
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National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;

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正文语种 eng
中图分类化学;
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1. Variable-Energy Positron Lifetime Study of Silicon-Oxide Films Plasma Deposited from Hexamethyldisiloxane and Oxygen Mixtures [J] . C. L. Wang, Y. Kobayashi, H. Togashi, Journal of Applied Polymer Science . 2001,第6期

机译：六甲基二硅氧烷和氧气混合物沉积的氧化硅薄膜等离子体的变能量正电子寿命研究
2. Variable-Energy Positron Annihilation as Highly Sensitive Nanoporosimetry for Porous Thin Films [J] . K. ITO, Y. KOBAYASHI Acta Physica Polonica. A, General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics . 2005,第5期

机译：可变能量正电子An灭作为多孔薄膜的高灵敏度纳米孔隙率法
3. Nanopore Structure of Sputtered Silica Thin Films Probed by Spectroscopic Ellipsometry and Variable-Energy Positron Annihilation [J] . Kenji Ito, Runsheng Yu, Yoshinori Kobayashi, 日本セラミックス協会学術論文誌 . 2004,第1306期

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4. Study of Pore Architecture in Silicon Oxide Thin Films by Variable-energy Positron Annihilation Spectroscopy [C] . Kenji Ito, Yoshinori Kobayashi, Runsheng Yu, Materials Research Society Symposium . 2003

机译：可变能源正电子湮没光谱法研究氧化硅薄膜的孔架构
5. Application of positron annihilation induced auger electron spectroscopy in measurements of interface defects and the stability of ultra-thin aluminum films grown on gallium arsenide(100) [D] . Chen, Wu-Chi 2000

机译：正电子an没螺旋钻电子光谱在砷化镓上生长的界面缺陷和超薄铝膜的稳定性测量中的应用（100）
6. Open Porosity and Pore Size Distribution of Mesoporous Silica Films Investigated by Positron Annihilation Lifetime Spectroscopy and Ellipsometric Porosimetry [O] . Bangyun Xiong, Jingjing Li, Chunqing He, 2021

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7. Subnanoporosity development in hydrocarbon-siliconoxide hybrid PECVD films elucidated by variable-energy positron annihilation [O] . Kenji Ito, Toshitaka Oka, Chunqing He, 2014

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8. Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface [R] . Irene, E. A. 1988

机译：硅氧化研究：siO2和si-siO2界面物理和化学中薄膜二氧化硅形成的最新研究综述

Study of Pore Architecture in Silicon Oxide Thin Films by Variable-energy Positron Annihilation Spectroscopy

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