首页> 外国专利> Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy

Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy

机译:使用镜面增强的偏振反射傅里叶变换红外光谱法表征超薄氧化硅膜的方法和装置

摘要

Ultrathin silicon oxide films thermally grown on Si (100) are characterized with Mirror-Enhanced Polarized Reflectance Fourier Transform Infrared spectroscopy (MEPR-FTIR). MEPR-FTIR is proposed to effectively probe properties of ultra-thin films. Using a mirror and a polarizer, MEPR-FTIR overcomes the difficulty of weak IR intensities normally encountered in ultrathin gate dielectrics such as SiO2 and the intensity of the silicon oxide longitudinal optical (LO) mode is found to increase by a factor of about 20. Therefore, FTIR spectrometers with sensitivity down to 0.01% may allow even sub-monolayer probing of silicon oxide on Si substrates.
机译:通过镜增强偏振反射傅里叶变换红外光谱(MEPR-FTIR)对在Si(100)上热生长的超薄氧化硅膜进行了表征。提出使用MEPR-FTIR来有效探测超薄膜的性能。使用反射镜和偏振器,MEPR-FTIR克服了通常在超薄栅极电介质(例如SiO 2 )中遇到的弱IR强度的难题,并且发现氧化硅纵向光学(LO)模式的强度达到FTIR光谱仪的灵敏度提高了约20倍。因此,灵敏度低至0.01%的FTIR光谱仪甚至可以对Si衬底上的氧化硅进行亚单层探测。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号