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首页> 外文学位 >Correlating absolute concentrations of gas-phase species determined by microwave, Fourier transform infrared, and atomic absorption spectroscopies to properties of silicon dioxide films deposited in an electron cyclotron resonance reactor.
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Correlating absolute concentrations of gas-phase species determined by microwave, Fourier transform infrared, and atomic absorption spectroscopies to properties of silicon dioxide films deposited in an electron cyclotron resonance reactor.

机译：通过微波，傅立叶变换红外光谱和原子吸收光谱法确定的气相物质的绝对浓度与沉积在电子回旋共振反应器中的二氧化硅膜的特性相关。

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摘要

Three different gas-phase absorption spectroscopies (microwave, FTIR, and silicon atomic absorption) were used simultaneously during the plasma enhanced chemical vapor deposition of SiO2 and fluorinated SiO 2 films using an ECR deposition reactor. With these spectroscopic techniques, absolute concentrations of a large number of species present in these deposition plasmas were determined. A new ECR system with multiple diagnostic ports on the same horizontal plane, and incorporating an electrostatic chuck, rf-bias, and He-backside cooling, was constructed to facilitate these studies. Correlations to the quality of the resulting films were made using ellipsometry, FTIR, XPS, and wet etch rate techniques. The systems investigated were SiH 4/O2/Ar, SiH4/SiF4/O2 and TEOS/O2 plasmas. The SiH4/O2 plasmas are found to contain less water than previously expected (under our detection limit of 0.1 mTorr). The molecular fragment SiO was monitored as a function of power, pressure, oxygen flow, and argon flow at densities between 3.7 × 109 and 1.3 × 10−11 cm−3 in this system. Silicon atoms were detected at densities between 5.1 × 109 and 5.8 × 1010 cm −3. The decomposition of SiF4 is investigated and is shown to occur at a constant rate of about 98% in pure SiF4/O 2 plasmas. This dissociation rate is enhanced when silane is added. Water and HF are generated in large quantities when SiH4 and SiF 4 are both present in the system, and reach their maximum concentrations at the SiF4/SiH4 ratio where the film quality appears to be the best. Fluorine incorporation into SiOF films result in a consistent decrease in index of refraction values. No SiO molecules were detected in SiH4/SiF4/O2 chemistries (5 × 10 9 cm−3). Plasmas employing TEOS/O2 chemistries show large concentrations of CO, CO2 and H2O. Larger organic molecules (ethanol, acetaldehyde, methanol, formaldehyde, and formic acid) are also present in these plasmas, totaling about 9% of the species present under most conditions. Densities of SiO were very close to those found in SiH4/O2/Ar plasmas. Results in all plasma conditions indicate a curious depletion of silicon-containing species detectable with these absorption techniques in the plasmas relative to the silicon in-flow.
机译：在等离子增强SiO 2 和氟化SiO 2 膜的等离子体化学气相沉积过程中，同时使用了三种不同的气相吸收光谱法（微波，FTIR和硅原子吸收法） ECR沉积反应器。利用这些光谱技术，确定了这些沉积等离子体中存在的大量物质的绝对浓度。构建了一个新的ECR系统，该系统在同一水平面上具有多个诊断端口，并结合了静电吸盘，rf偏压和He背面冷却，以方便这些研究。使用椭圆偏振光度法，FTIR，XPS和湿法刻蚀速率技术对所得膜的质量进行了相关性分析。研究的系统为SiH 4 / O 2 / Ar，SiH 4 / SiF 4 / O 2 和TEOS / O 2 等离子体。发现SiH 4 / O 2 等离子体中的水含量比以前预期的要少（在我们的检测极限0.1 mTorr下）。在3.7×10 9 和1.3×10 -11 cm −3 在此系统中。硅原子的密度在5.1×10 9 和5.8×10 10 cm -3 之间。研究了SiF 4 的分解，结果表明该分解在纯SiF 4 / O 2 等离子体中以约98％的恒定速率发生。当添加硅烷时，该解离速率提高。当系统中同时存在SiH 4 和SiF 4 时，大量生成水和HF，并在SiF 4 / SiH 4 比率，薄膜质量似乎最好。将氟掺入SiOF薄膜中会导致折射率值不断降低。在SiH 4 / SiF 4 / O 2 化学（<5×10 9 cm −3 ）。使用TEOS / O 2 化学物质的血浆显示出高浓度的CO，CO 2 和H 2 O。在这些血浆中也存在较大的有机分子（乙醇，乙醛，甲醇，甲醛和甲酸），在大多数条件下总计约占物种总数的9％。 SiO的密度与SiH 4 / O 2 / Ar等离子体中的密度非常接近。在所有等离子体条件下的结果表明，相对于流入的硅，用这些吸收技术在等离子体中可检测到的含硅物质的稀缺性。

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  • 作者

    Cornett, Mary Jezl.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Chemistry Inorganic.; Physics Fluid and Plasma.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 218 p.
  • 总页数 218
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;等离子体物理学;
  • 关键词

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