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Direct Determination of the Stacking Order in Gd_2O_3 Epi-Layers on GaAs

机译：GaAs上Gd_2O_3外延层中堆叠顺序的直接确定

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We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd_2O_3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd_2O_3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd_2O_3. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd_2O_3 in which the GaAs stacking order persists throughout the entire film.
机译：我们已使用相干布拉格棒分析（COBRA）来研究在（100）GaAs衬底上外延生长的5.6 nm厚的Gd_2O_3膜的原子结构。 COBRA是一种通过确定沿基板布拉格棒的复数散射因子来直接获取二维周期性系统结构的方法。系统的电子密度和原子结构是通过傅立叶将复杂的散射因子转换为真实空间而获得的。结果表明，前七个Gd_2O_3薄膜层的堆叠顺序类似于GaAs中Ga和As层的堆叠顺序，然后变为立方块Gd_2O_3的堆叠顺序。这种行为与在2.7 nm厚的Gd_2O_3中测得的堆叠顺序明显不同，其中GaAs堆叠顺序在整个薄膜中均保持不变。

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