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Low Temperature Growth of Silicon Dioxide Thin Films by UV Photo-oxidation

机译：紫外光氧化法低温生长二氧化硅薄膜

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摘要

The low-temperature growth of thin SiO_2 layers for gate insulators in very large-scale integrated (VLSI) circuits is becoming an urgent topic of silicon technology. In contrast, to conventional thermal oxidization processes (T > 900℃), ultraviolet (UV) photo-oxidation of silicon technology is a promising approach for low-temperature growth of silicon dioxide thin films. We have grown silicon dioxide thin films at low temperature (T < 500 ℃) using an excimer lamp with various wavelengths and evaluated the quality of thin SiO_2 layers as well as the SiO_2-Si interface. We found that the SiO_2 layers (t < 5 nm) grown by UV photo-oxidation show significant differences in physical properties, such as density profile, from those of thermal oxidization, i.e., the higher average density 2.23 g/cm~3 and more constant distribution, making the SiO_2-Si interface region, so-called "transition layer" less eminent. Superior characteristics of ultra-thin SiO_2 layer grown by UV photo-oxidation are demonstrated.
机译：超大规模集成电路（VLSI）中用于栅极绝缘体的SiO_2薄层的低温生长正成为硅技术的紧迫课题。相比之下，与传统的热氧化工艺（T> 900℃）相比，硅技术的紫外线（UV）光氧化是用于二氧化硅薄膜低温生长的一种有前途的方法。我们已经使用各种波长的准分子灯在低温（T <500℃）下生长了二氧化硅薄膜，并评估了SiO_2薄层以及SiO_2-Si界面的质量。我们发现，通过紫外线光氧化法生长的SiO_2层（t <5 nm）与热氧化法相比，在物理性质（例如密度分布）方面存在显着差异，即更高的平均密度2.23 g / cm〜3或更高。恒定的分布，使得SiO_2-Si界面区域（所谓的“过渡层”）不那么突出。证明了通过紫外光氧化生长的超薄SiO_2层的优异特性。

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