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THIN FILM TRANSISTOR ARRAY SUBSTRATE, LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR
THIN FILM TRANSISTOR ARRAY SUBSTRATE, LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR
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机译：薄膜晶体管阵列基板，低温多晶硅薄膜晶体管以及制造低温多晶硅薄膜晶体管的方法
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摘要
The present disclosure provides a low temperature poly-silicon thin film transistor. The low temperature poly-silicon thin film transistor includes a substrate, a poly-silicon layer formed at a surface of the substrate, an insulating layer, a gate electrode, a first control electrode, a second control electrode, a source electrode, and a drain electrode. The insulating layer covers the poly-silicon layer. A gap between the first control electrode and the gate electrode and a gap between the second control electrode and the gate electrode correspond to offset regions of the poly-silicon layer. Two heavily doped regions formed at the poly-silicon layer are respectively located besides the first control electrode and the second control electrode away from the offset regions. The source electrode and the drain electrode are respectively formed at the heavily doped regions.
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