STM study of 3~(1/2) x 3~(1/2)-B reconstruction on Si(111)

机译：在Si（111）上进行3〜（1/2）x 3〜（1/2）-B重建的STM研究

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The formation of the boron-induced 3~(1/2) x 3~(1/2) reconstruction on Si(111) 7x7 surface has been studied with scanning tunneling microscope. By evaporating elemental B on Si elevated at high temperatures, 3~(1/2) x3~(1/2)-B reconstructed structures develop from the step edge to the adjacent lower terrace. They emerge at temperatures between 800 deg C and 900 deg C. It indicates that phase transition from 7x7 to 1x1 surface structure is necessary for forming the 3~(1/2)-B reconstructed structures. The phase boundary between 7x7 and 3~(1/2)x3~(1/2)-B regions are formed, depending on the direction of the step propagation.

机译：利用扫描隧道显微镜研究了硼诱导的Si（111）7x7表面3〜（1/2）x 3〜（1/2）重构的形成。通过在高温下蒸发掉Si上的元素B，从台阶边缘到相邻的下部平台形成3〜（1/2）x3〜（1/2）-B的重构结构。它们出现在800摄氏度至900摄氏度之间的温度下。这表明从7x7到1x1表面结构的相变对于形成3〜（1/2）-B重建结构是必要的。根据阶跃传播的方向，在7×7和3〜（1/2）×3〜（1/2）-B区域之间形成相位边界。

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《Symposium on Atomic Resolution Microscopy of Surfaces and Interfaces held December 3-5, 1996, Boston; Massachusetts,U.S.A.》|1996年|p.167-172|共6页
会议地点 Boston MA(US)
作者
M.Umekawa; S.Ohara; S.Tatsukawa; H.Kuriyama; S.Matsumoto;
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正文语种 eng
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STM study of 3~(1/2) x 3~(1/2)-B reconstruction on Si(111)

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