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首页> 外文会议>Symposium on Atomic Resolution Microscopy of Surfaces and Interfaces held December 3-5, 1996, Boston; Massachusetts,U.S.A. >Kinetic investigations of the initial oxidation stage of copper by in-situ UHV-tem
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Kinetic investigations of the initial oxidation stage of copper by in-situ UHV-tem

机译：原位UHV-tem对铜初始氧化阶段的动力学研究

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We have examined the nucleation and growth of copper oxides formed by in-situ oxidation of copper thin films inside a modified transmission electron microscope (TEM). Based on this data, we have develope da semi-quantitative model of the initial oxidation state where the dominant mechanism for transport, nucleation and growth of oxide islands is oxygen diffusion on the surface. The copper oxide can be desorbed by annealing and introducing methanol vapor into the chamber. The clean copper film can be oxidized by introducing oxygen gas. Both the desorption and oxidation processes were observed by planar TEM techniques. The copper film was oxidized in-situ at a partial pressure of 5x10~-4 torr. Cu_2O islands, which formed epitaxially to the copper film, nucleated and grew into the copper film.
机译：我们已经检查了在改进的透射电子显微镜（TEM）中通过铜薄膜的原位氧化形成的氧化铜的形核和生长。基于这些数据，我们开发了初始氧化态的半定量模型，其中氧化物岛的运输，成核和生长的主要机理是表面上的氧扩散。可以通过退火并将甲醇蒸气引入腔室中来解吸氧化铜。可以通过引入氧气来氧化干净的铜膜。通过平面TEM技术观察到解吸和氧化过程。铜膜在5x10〜-4托的分压下原位氧化。在铜膜上外延形成的Cu_2O岛形核并长成铜膜。

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