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首页> 外文会议>Symposium on Chemical-Mechanical Polishing - Fundamentals and Challenges held April 5-7, 1999,San Francisco, California, U.S.A. >Process control challenges and solutions: teos,W and Cu CMP
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Process control challenges and solutions: teos,W and Cu CMP

机译：过程控制挑战和解决方案：teos，W和Cu CMP

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摘要

Various options that afford control of the TEOS, W, and Cu/barrier polishes were explored in the building of multilevel dual inlaid structures. Improved tool performance that enables more sophisticated down pressure control with higher resolution backpressure adjustments was employed for the oxide module to control in interlevel capacitances. Planarity at both the global and local levels at the oxide polish affords a good starting point for successive builds without metal pooling. In W CMP. small and controllable oxide erosion and plug recess was obtained with harder polishing pads. In Cu/barrier CMP, the tight overpolish/underpolish margin was maintained by head control and appropriate endopint algorithms. A six-level build with tight and low sheet resistances and leakages was demonstrated.
机译：在多层双层镶嵌结构的建造中，探索了各种可以控制TEOS，W和Cu /势垒抛光的方法。氧化物模块采用了改进的工具性能，可以通过更高分辨率的背压调节实现更复杂的下行压力控制，从而控制层间电容。氧化物抛光剂在全局和局部水平上的平面度为连续构建而没有金属聚集提供了良好的起点。在W CMP中。使用较硬的抛光垫可获得较小且可控的氧化物腐蚀和塞孔。在铜/势垒CMP中，通过头部控制和适当的内点算法保持了严格的上光/下光裕度。演示了具有紧密和低薄层电阻和泄漏的六层结构。

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