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首页> 外文会议>Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US >Evaluation of tetrakis(diethylamino)hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition
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Evaluation of tetrakis(diethylamino)hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition

机译：原子层沉积法评估氧化ki薄膜中四（二乙氨基）ha的前体

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摘要

Due to their compatibility with silicon interface and high dielectric constant, films containing hafnium oxide are becoming strong candidates in replacing silicon oxynitride as the gate dielectric layer in CMOS devices. To achieve ultimate conformality and thickness control, atomic layer deposition is receiving much more attention in recent years for nanometer size film applications. For hafnium oxide deposition by ALD, metal chlorides have traditionally been used as precursors with moisture being the co-reactant; however for gate oxide applications, metal chlorides are not considered suitable due to the corrosive nature of these compounds and the risks of film contamination. Hence, researchers are exploring alternate organometallic precursors in a CVD process with oxygen being the co-reactant. In this work, tetrakis (diethylamino) hafnium precursor is used in an ALD process with moisture co-reactant to deposit hafnium oxide films onto H-terminated Si substrate in a temperature regime of 200 to 350 C. Film composition is determined by x-ray analysis and is found to be stoichiometric without residue from ligand decomposition. Film thickness and uniformity is measured as a function of substrate temperature and reagent pulsing characteristics. These results will be presented and compared with that obtained with the more conventional hafnium chloride precursor.
机译：由于它们与硅界面的相容性和高介电常数，因此含有氧化ha的薄膜已成为替代氧氮化硅作为CMOS器件中的栅极介电层的有力候选者。为了实现最终的保形性和厚度控制，近年来，对于纳米尺寸的薄膜应用，原子层沉积越来越受到关注。对于通过ALD沉积氧化ha，传统上将金属氯化物用作前体，而水分是共反应物。然而，对于栅氧化物应用，由于金属氯化物的腐蚀性和膜污染的风险，因此不适合使用金属氯化物。因此，研究人员正在探索以氧气为辅助反应物的CVD工艺中的其他有机金属前体。在这项工作中，四（二乙氨基）ha前驱体与水分共反应物一起用于ALD工艺中，在200至350℃的温度范围内将氧化films膜沉积到H封端的Si基板上。膜组成由X射线确定经分析发现是化学计量的，没有配体分解产生的残留物。根据基材温度和试剂脉冲特性来测量薄膜厚度和均匀性。将介绍这些结果并将其与更常规的氯化ha前体获得的结果进行比较。

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