Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

机译：四（二甲基氨基）H（TDMAH）和臭氧形成氧化Ha薄膜的原子层沉积

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Hafnium oxide (HfO_2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O_3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O_3 showed better saturation behavior for O_3 exposure. Yet, 100% step coverage was achieved for ～100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160℃ to 420℃. The lowest deposition rate was observed at 320℃. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200℃ to 320℃. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

机译：通过四（二甲基氨基）ha（TDMAH）和臭氧（O_3）通过原子层沉积（ALD）在200毫米硅晶片上合成氧化（HfO_2）薄膜。观察到TDMAH暴露脉冲逐渐饱和。但是，O_3对于O_3暴露显示出更好的饱和行为。然而，对于长宽比为35的〜100nm沟槽，实现了100％的台阶覆盖率。在基座温度为160℃至420℃的条件下研究了沉积速率的温度依赖性。在320℃观察到最低的沉积速率。汞探针的测量表明，随着基座温度从200℃上升到320℃，介电常数从16增加到20。还选择了与四（乙基甲基氨基）ha（TEMAH）的比较。

著录项

来源
《Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US》|2003年|P.97-102|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Xinye Liu; Sasangan Ramanathan; Thomas E. Seidel;
展开▼
作者单位

Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing [J] . Garcia Hector, Castan Helena, Duenas Salvador, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 2013,第1期

机译：四（二甲基amide）和水/臭氧在原子层上沉积的氧化nium薄膜的电学特性：生长温度，氧气源和沉积后退火的影响
2. Characterization of Ultra-Thin Hafnium Oxide Films Grown on Silicon by Atomic Layer Deposition Using Tetrakis(ethylmethyl-amino) Hafnium and Water Precursors [J] . Y. Wang, M.-T. Ho, L. V. Goncharova Chemistry of Materials: A Publication of the American Chemistry Society . 2007,第13期

机译：四（乙基甲基-氨基）Ha和水前体的原子层沉积法表征硅上生长的超薄氧化nium薄膜
3. Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water [J] . Kaupo Kukli, Tero Pilvi, Mikko Ritala, Thin Solid Films . 2005,第1a2期

机译：四（二甲基amide）ha和水中的二氧化ha薄膜的原子层沉积
4. Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone [C] . Xinye Liu, Sasangan Ramanathan, Thomas E. Seidel Materials Research Society Symposium . 2003

机译：来自四（二甲基氨基）铪（TDMAH）和臭氧的氧化铪薄膜的原子层沉积
5. Integration of Feedback Control and Run-to-Run Control for Plasma Enhanced Atomic Layer Deposition of Hafnium Oxide Thin Films [D] . Yun, Sungil. 2021

机译：反馈控制的整合和运行控制对氧化铪薄膜的等离子体增强的原子层沉积
6. Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition [O] . Xingwei Ding, Cunping Qin, Jiantao Song, 2017

机译：勘误表：Do掺杂对通过原子层沉积沉积的氧化锌薄膜晶体管中状态密度的影响
7. Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing [O] . García, H., Castán, H., Dueñas, S., 2016

机译：四（二甲基amide）和水/臭氧在原子层上沉积的氧化nium薄膜的电学特性：生长温度，氧气源和沉积后退火的影响

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

摘要

著录项

相似文献

相关主题

期刊订阅