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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >Interface state densities for SiN_x:H on cleaved GaAs and InP(110)
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Interface state densities for SiN_x:H on cleaved GaAs and InP(110)

机译：GaN和InP（110）上SiN_x：H的界面态密度

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摘要

Silicon nitride was deposited in-situ by electron-cyclotron resonance plasma chemical-vapour deposition (ECR-CVD) on (110) surfaces formed by cleaving GaAs and InP(100) substrates in an ultra-high vacuum processing system. Capacitors formed by depositing Algates on the facet surfaces were analyzed by the high-low frequency capacitance-voltage (CV) technique. The minimum interface-state densities obtained for the cleaved GaAs (110) surfaces were 1-2x10~ 12 eV~-1 cm~-2. For cleaved InP facets the measured minimum interface state densities were a factor of two higher; however, they exhibited a smaller hysteresis in the CV characteristics and a smaller modulation in the surface potential. The interface state densities did not change significantly for the GaAs (110) facets if a Si interface control layer 0.8-2 nm thick was deposited prior to silicon nitride deposition; however, a larger effect was observed for the hysteresis and flaband voltage shift of the CV characteristics. The effect of annealing on the interfaces with Si was investigated and the performance compared with published results for GaAs(100) surfaces prepared by modecular-beam epitaxy.
机译：氮化硅通过电子回旋共振等离子体化学气相沉积（ECR-CVD）在超高真空处理系统中通过裂解GaAs和InP（100）基板形成的（110）表面上原位沉积。通过高低频电容-电压（CV）技术分析了通过在小平面表面上沉积Algate形成的电容器。裂解的GaAs（110）表面获得的最小界面态密度为1-2x10〜12 eV〜-1 cm〜-2。对于劈开的InP刻面，测得的最小界面态密度要高两倍。然而，它们在CV特性上表现出较小的磁滞，在表面电势上具有较小的调制。如果在氮化硅沉积之前沉积0.8-2 nm厚的Si界面控制层，则GaAs（110）刻面的界面态密度不会显着变化。但是，对于CV特性的滞后和flaband电压偏移观察到了更大的影响。研究了退火对与Si的界面的影响，并将其与通过近光外延制备的GaAs（100）表面的性能进行了比较。

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