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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices
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One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices

机译：通过ECR-CVD对异质结构晶体管和MIS器件进行一步氮化硅钝化

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摘要

Silicon nitride (SiN_x) films with extremely low interface charge densities have been developed by electron cyclotron resonance-chemical vapor deposition (ER-CVD) deposition on GaAs substrates. The procedure is a one-step process and does not involve H_2 and/or N_2 pre-treatment of the sample surface. characterization by Fourier transform infrared (FTIR) and ellipsometry analysis indicate good properties of the film revealing N-H and Si-N bonds. Results of capacitance-voltage (C-V) measurements show surface charge densities on the order of 5x10~10 cm~-2, which we believe is the lowest surface charge density schieved so far over GaAs.
机译：通过在GaAs衬底上进行电子回旋共振化学气相沉积（ER-CVD）沉积，已经开发出具有极低界面电荷密度的氮化硅（SiN_x）膜。该过程是一个一步的过程，不涉及样品表面的H_2和/或N_2预处理。傅里叶变换红外光谱（FTIR）和椭圆偏振分析的特征表明该膜具有N-H和Si-N键的良好性能。电容-电压（C-V）测量结果显示表面电荷密度约为5x10〜10 cm〜-2，这是迄今为止我们在GaAs上实现的最低表面电荷密度。

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