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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >MBE growth of oxides for III-N mosfets
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MBE growth of oxides for III-N mosfets

机译：MBE生长的III-N型氧化物氧化物

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摘要

Reproducible fabrication of high performance metal oxide semiconductor field effect transistors (MOSFETs) from compound semiconductors will require both good interfacial electrical characteristics and good thermal stability. While dielectrics such as SiO_2, AlN, and GdGaO_x have demonstrated low to moderate interface state densities, questions remain about their thermal stability and reliability, particularly for use in high power or high temperature widebanggap devices. In this paper we will compare the utility of two potential gate dielectric mateiral: GdO_x and GaO_x. GdO_x has been found to produce layers with excellent surface morphologies as evidenced by surface roughness of less than 1 nm. Stoichiometric films can be easily obtained over a range of deposition conditions, though deposition temperatures of 500 deg C appear to offer the optimum interfacial electrical quality. By contrast GaO_x films are quite rough, polycrystalline and show poor thermal stability. Further they exhibit a range of stoichiometries depending upon deposition temperature, Ga flux and oxygen flux. This paper will describe the relationship between deposition conditions and film characteristics for both materials, and will present electrical characterization of capacitors fabricated from GdO_x on Si.
机译：由化合物半导体可再现地制造高性能金属氧化物半导体场效应晶体管（MOSFET）将需要良好的界面电特性和良好的热稳定性。尽管电介质（例如SiO_2，AlN和GdGaO_x）显示出低至中等的界面态密度，但有关其热稳定性和可靠性的问题仍然存在，尤其是在大功率或高温宽带隙器件中的使用。在本文中，我们将比较两种潜在的栅极电介质材料GdO_x和GaO_x的效用。已经发现GdO_x产生具有优异表面形态的层，这由小于1 nm的表面粗糙度证明。尽管在500摄氏度的沉积温度下似乎可以提供最佳的界面电气质量，但在一定范围的沉积条件下仍可轻松获得化学计量薄膜。相比之下，GaO_x薄膜非常粗糙，多晶且显示出差的热稳定性。此外，它们根据沉积温度，Ga通量和氧通量表现出一定的化学计量范围。本文将描述两种材料的沉积条件与膜特性之间的关系，并介绍在Si上由GdO_x制成的电容器的电学特性。

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