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首页> 外文会议>Symposium on Covalently Bonded Disordered Thin-Film Materials held December 2-4, 1997, Boston, Massachusetts, U.S.A. >Structure, optical and electrical properties of pulsed laser deposited and ion beam deposited CN_x films
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Structure, optical and electrical properties of pulsed laser deposited and ion beam deposited CN_x films

机译：脉冲激光沉积和离子束沉积CN_x膜的结构，光电性能

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摘要

CN_x films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature T_s = 25 deg C and high N_2 partial pressure have the highest N content (f_N) and polymerike structure, accompanied by large band gap (E_g) and low electrical conductivity ( sigma _(room)). The rise in T_s lowers f_N and induces graphitization of the film structure, so E_g reduces and sigma _(room) increases. IBD (with and without N_2~+ assist) films are graphitic. Higher T_s further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and sigma _(room) approaches to that of graphite. No evidence was found to show successful formation of the hypothetical beta -C_3N_4 phase in the films.
机译：使用脉冲激光沉积（PLD）和离子束沉积（IBD）沉积CN_x膜。在衬底温度T_s = 25℃和高N_2分压下沉积的PLD膜具有最高的N含量（f_N）和聚合物结构，伴有较大的带隙（E_g）和低的电导率（sigma _（room））。 T_s的升高会降低f_N并引起薄膜结构的石墨化，因此E_g减小，sigma _（room）增大。 IBD（有和没有N_2〜+辅助）膜都是石墨的。较高的T_s进一步增强了膜结构的石墨化，使得导带和价带重叠，并且σ（房间）接近石墨。没有证据表明在膜中成功形成了假设的β-C_3N_4相。

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